SEMICONDUCTOR DEVICE HAVING VOLTAGE REGULATORS EMBEDDED IN LAYERED PACKAGE

• US 20200105733A1
• Filed: 09/28/2018
• Published: 04/02/2020
• Est. Priority Date: 09/28/2018
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Burton, Edward A.
• Granted Patent: US 10,643,984 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/5383 Multilayer substrates H01L23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L23/538
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15312 being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/15313 being a land array, e.g. LGA
• CPC Class Codes: H01L 2924/37001 Yield

Abstract

A computing chip can include one or more voltage regulators to decrease a standard voltage, such as twelve volts, to a relatively low operating voltage of its processing cores, typically around one volt. Because the power consumed by the cores can be substantial, such as three hundred watts or more, it is desirable to locate the voltage regulators as close as possible to the cores, to reduce the distances that relatively large currents have to travel in the chip circuitry. The voltage regulators can be embedded within the package, such as in a layered structure, in a layer that electrically connects to the cores. While the cores are typically manufactured using the smallest possible lithographic features, the voltage regulators are less demanding and can instead use relatively large lithographic features, which can be formed using relatively old technology, and can therefore be relatively inexpensive.

Claims

1. A semiconductor device, comprising:

a package including circuitry arranged in layers that are electrically connected to one another through electrically conductive vias;

a semiconductor die positioned on a front side of the package and electrically connected to the package;

an electrical connection positioned on the package and electrically connected to the package; and

a voltage regulator embedded within the package, the voltage regulator configured to accept a first voltage from the electrical connection, reduce the first voltage to a second voltage, and deliver the second voltage to the semiconductor die.

2. The semiconductor device of claim 1, wherein the electrical connection is positioned on a back side of the package.

3. The semiconductor device of claim 1, wherein the voltage regulator comprises voltage regulation circuitry positioned on a base.

4. The semiconductor device of claim 3, wherein the voltage regulation circuitry and the base are embedded between a first layer of the package and a second layer of the package.

5. The semiconductor device of claim 4, wherein:

the voltage regulation circuitry includes features having a first minimum feature size; and

the semiconductor die includes features having a second minimum feature size smaller than the first minimum feature size.

6. The semiconductor device of claim 1, wherein:

the voltage regulator is electrically connected to the semiconductor die by an electrical path having an inductance;

the inductance is provided by a structure of the package; and

the electrical path lacks an explicit inductor component.

7. The semiconductor device of claim 1, wherein:

the package is formed as layers disposed on a substrate; and

the voltage regulator is positioned between the substrate and the electrical connection.

8. The semiconductor device of claim 1, wherein the first and second voltages are direct current.

9. The semiconductor device of claim 1, wherein:

the voltage regulator includes four transistors that are arranged in series;

a first of the four transistors is a PMOS transistor switched at a frequency and a duty cycle;

a second of the four transistors is a PMOS transistor having a gate attached to a direct current voltage;

a third of the four transistors is an NMOS transistor having a gate attached to the direct current voltage; and

a fourth of the four transistors is an NMOS transistor switched at the frequency and the duty cycle.

10. The semiconductor device of claim 1, wherein:

the semiconductor die is one of a plurality of semiconductor dies positioned on the front side of the package and electrically connected to the package;

the electrical connection is one of a plurality of electrical connections positioned on the back side of the package and electrically connected to the package;

the voltage regulator is one of a plurality of voltage regulators embedded within the package; and

each voltage regulator of the plurality of voltage regulators is configured to accept a first voltage from at least one electrical connection, reduce the first voltage to a second voltage, and deliver the second voltage to a corresponding semiconductor die of the plurality of semiconductor dies.

11. The semiconductor device of claim 10, wherein the plurality of voltage regulators are embedded within a single layer of the package.

12. The semiconductor device of claim 10, wherein:

the plurality of semiconductor dies are arranged as a first two-dimensional array;

the plurality of voltage regulators are arranged as a second two-dimensional array; and

the second two-dimensional array is offset from the first two-dimensional array in a direction orthogonal to the first two-dimensional array.

13. The semiconductor device of claim 12, wherein:

the plurality of semiconductor dies are arranged in clusters of four semiconductor dies that share a common corner;

the plurality of voltage regulators are arranged in clusters of four voltage regulators that share a common corner; and

the common corners of the voltage regulators are offset from the common corners of the semiconductor dies in the direction orthogonal to the first two-dimensional array.

14. A method for manufacturing a semiconductor device, comprising:

attaching a computing element to a front side of a package, the computing element electrically connecting to the package;

forming an electrical connection on a back side of the package, the electrical connection electrically connecting to the package; and

embedding a voltage regulator within the package, the voltage regulator configured to accept a first voltage from the electrical connection, reduce the first voltage to a second voltage, and deliver the second voltage to the computing element.

15. The method of claim 14, wherein:

the voltage regulator comprises voltage regulation circuitry positioned on a base; and

embedding the voltage regulator comprises placing the voltage regulation circuitry and the base onto a first layer of the package, then forming a second layer of the package on the voltage regulation circuitry.

16. The method of claim 15, wherein:

the voltage regulation circuitry includes features having a first minimum feature size; and

the semiconductor die includes features having a second minimum feature size smaller than the first minimum feature size.

17. A semiconductor device, comprising:

a package including circuitry arranged in layers that are electrically connected to one another through electrically conductive vias;

a plurality of semiconductor dies positioned on a front side of the package and electrically connected to the package;

a plurality of electrical connections positioned on a back side of the package and electrically connected to the package; and

a plurality of voltage regulators embedded within the package, each voltage regulator of the plurality of voltage regulators configured to accept a first voltage from an electrical connection, reduce the first voltage to a second voltage, and deliver the second voltage to a respective semiconductor die of the plurality of semiconductor dies.

18. The semiconductor device of claim 17, wherein:

the plurality of voltage regulators are embedded within a single layer of the package;

the plurality of semiconductor dies are arranged as a first two-dimensional array;

the plurality of voltage regulators are arranged as a second two-dimensional array; and

the second two-dimensional array is offset from the first two-dimensional array in a direction orthogonal to the first two-dimensional array.

19. The semiconductor device of claim 18, wherein:

the plurality of semiconductor dies are arranged in clusters of four semiconductor dies that share a common corner;

the plurality of voltage regulators are arranged in clusters of four voltage regulators that share a common corner; and

the common corners of the voltage regulators are offset from the common corners of the semiconductor dies in the direction orthogonal to the first two-dimensional array.

20. The semiconductor device of claim 17, wherein:

each voltage regulator comprises voltage regulation circuitry positioned on a respective base;

each voltage regulator is embedded by placing the voltage regulation circuitry and the base onto a first layer of the package, then forming a second layer of the package on the voltage regulation circuitry;

the voltage regulation circuitries include features having a first minimum feature size; and

the semiconductor dies include features having a second minimum feature size smaller than the first minimum feature size.