COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM INCLUDING DISILYLAMINE COMPOUND AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME

• US 20200131205A1
• Filed: 04/19/2018
• Published: 04/30/2020
• Est. Priority Date: 04/20/2017
• Status: Active Grant

• Current Assignee: DNF Co., Ltd.
• Original Assignee: DNF Co., Ltd.
• Inventors: KIM, Sung Gi, JANG, Se Jin, YANG, Byeong-il, PARK, Joong Jin, LEE, Sang-Do, PARK, Jeong Joo, LEE, Sam Dong, PARK, Gun-Joo, LEE, Sang Ick, KIM, Myong Woon
• Granted Patent: US 10,894,799 B2
• Time in Patent Office: Days
• CPC Class Codes: C07F 7/10 containing nitrogen having a Si-N linkage
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02123 the material containing silicon
• CPC Class Codes: H01L 21/02208 the precursor containing a compound comprising Si
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Claims

1. A composition for depositing a silicon-containing thin film, comprising a disilylamine compound represented by the following Chemical Formula 1:

2. The composition for depositing a silicon-containing thin film of claim 1, wherein in Chemical Formula 1,

R_a and R_b are each independently hydrogen, C1-C5alkyl or C2-C5alkenyl, with a proviso that R_a and R_b are not hydrogen at the same time;

R₁ to R₃ are hydrogen; and

R₄ to R₉ are each independently hydrogen, C1-C5alkyl or C2-C5alkenyl.

3. The composition for depositing a silicon-containing thin film of claim 1, wherein Chemical Formula 1 is represented by the following Chemical Formula 2:

4. The composition for depositing a silicon-containing thin film of claim 3, wherein in Chemical Formula 2, R₁₁ to R₁₄ are each independently hydrogen or C1-C5alkyl.

5. The composition for depositing a silicon-containing thin film of claim 1, wherein the disilylamine compound of Chemical Formula 1 is selected from the group consisting of the following compounds:

8. The method of claim 6, comprising:

a) maintaining a temperature of a substrate mounted in a chamber to 30 to 400°

C.;

b) injecting carrier gas and the composition for depositing a silicon-containing thin film of claim 1; and

c) injecting reaction gas to deposit the silicon-containing thin film on the substrate.

9. The method of claim 8, wherein the reaction gas is any one or two or more selected from the group consisting of oxygen, ozone, distilled water, hydrogen peroxide, nitrogen monoxide, nitrous oxide, nitrogen dioxide, ammonia, nitrogen, hydrazine, amine, diamine, carbon monoxide, carbon dioxide, C₁ to C₁₂ saturated or unsaturated hydrocarbon, hydrogen, argon and helium.

6. A method for manufacturing a silicon-containing thin film, using a composition for depositing a silicon-containing thin film, comprising a disilylamine compound represented by the following Chemical Formula 1:

7. The method of claim 6, wherein the method is performed by atomic layer deposition, chemical vapor deposition, metalorganic chemical vapor deposition, low pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition or plasma-enhanced atomic layer deposition.

10. The method of claim 6, wherein in Chemical Formula 1,

Ra and Rb are each independently hydrogen, C1-C5alkyl or C2-C5alkenyl, with a proviso that Ra and Rb are not hydrogen at the same time;

R1 to R3 are hydrogen; and

R4 to R9 are each independently hydrogen, C1-C5alkyl or C2-C5alkenyl.

11. The method of claim 6, wherein Chemical Formula 1 is represented by the following Chemical Formula 2:

12. The method of claim 11, wherein in Chemical Formula 2, R11 to R14 are each independently hydrogen or C1-C5alkyl.

13. The method of claim 6, wherein the disilylamine compound of Chemical Formula 1 is selected from the group consisting of the following compounds: