Block Copolymer

• US 20200131296A1
• Filed: 11/29/2017
• Published: 04/30/2020
• Est. Priority Date: 11/30/2016
• Status: Active Grant

• Current Assignee: LG Chem Limited (LG Corporation)
• Original Assignee: LG Chem Limited (LG Corporation)
• Inventors: Lee, Je Gwon, Park, No Jin, Kim, Jung Keun, Choi, Eun Young, Ku, Se Jin, Lee, Mi Sook, Ryu, Hyung Ju, Yoon, Sung Soo
• Granted Patent: US 11,299,572 B2
• Time in Patent Office: Days
• CPC Class Codes: C08F 212/20 Fluorine
• CPC Class Codes: C08F 220/301 and one oxygen in the alcohol moiety
• CPC Class Codes: C08F 230/08 containing silicon
• CPC Class Codes: C08F 230/085 the monomer being a polymerisable silane, e.g. (meth)acryloyloxy trialkoxy silanes or vinyl trialkoxysilanes
• CPC Class Codes: C08F 2438/03 Use of a di- or tri-thiocarbonylthio compound, e.g. di- or tri-thioester, di- or tri-thiocarbamate, or a xanthate as chain transfer agent, e.g . Reversible Addition Fragmentation chain Transfer [RAFT] or Macromolecular Design via Interchange of Xanthates [MADIX]
• CPC Class Codes: C08F 293/005 using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
• CPC Class Codes: C08J 5/18 Manufacture of films or sheets
• CPC Class Codes: C09D 153/00 Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
• CPC Class Codes: G03F 1/00 Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
• CPC Class Codes: H01L 21/027 Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 photographic masks or originals per se G03F1/00; registration or positioning of photographic masks or originals G03F9/00; photographic cameras G03B; control of position G05D3/00
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence

Abstract

The present application can provide a block copolymer and a use thereof. The block copolymer of the present application can have excellent self-assembly properties or phase separation characteristics and excellent etching selectivity, and various other functions as required can be freely imparted thereto.

Claims

1. A block copolymer comprising a polymer segment A having a unit represented by Formula 1 below and a polymer segment B different from the polymer segment A:

2. The block copolymer according to claim 1, wherein X is a single bond, an oxygen atom, —

C(═

O)—

O—

or —

O—

C(═

O)—

.

3. The block copolymer according to claim 1, wherein X is —

C(═

O)—

O—

.

4. The block copolymer according to claim 1, wherein the chain comprises 8 to 20 chain-forming atoms.

5. The block copolymer according to claim 1, wherein the chain-forming atom is carbon, oxygen, nitrogen or sulfur.

6. The block copolymer according to claim 1, wherein the chain-forming atom is carbon or oxygen.

7. The block copolymer according to claim 1, wherein the chain is a hydrocarbon chain.

8. The block copolymer according to claim 1, wherein the ring structure is an aromatic ring structure or an alicyclic ring structure.

9. The block copolymer according to claim 1, wherein Y is represented by Formula 2 below:

-P-Q-Z 

 

[Formula 2]

wherein, P is an arylene group, Q is a single bond, an oxygen atom or —

NR₃—

, where R₃ is hydrogen, an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group or an aryl group, and Z is a chain having 8 or more chain-forming atoms and substituted with a hydrocarbon functional group comprising one or more silicon atoms or iron atoms.

10. The block copolymer according to claim 1, wherein the hydrocarbon functional group is a functional group represented by Formula 4 below or a silsesquioxanyl group:

11. The block copolymer according to claim 1, wherein the polymer segment B comprises a unit of Formula 5 below

12. The block copolymer according to claim 1, wherein the polymer segment B comprises a unit of Formula 6 below:

13. The block copolymer according to claim 1, wherein the polymer segment B comprises a unit of Formula 7 below:

14. A polymer film comprising the self-assembled block copolymer of claim 1.

15. A method for forming a polymer film, which comprises forming on a substrate a polymer film comprising the self-assembled block copolymer of claim 1.

16. A patterning method comprising a process of selectively removing, from a laminate having a substrate, and the polymer film formed on the substrate and comprising the self-assembled block copolymer of claim 1, any one of polymer segments in the block copolymer.