COMPOSITION FOR FORMING FILM PROTECTING AGAINST AQUEOUS HYDROGEN PEROXIDE SOLUTION

• US 20200131376A1
• Filed: 04/10/2018
• Published: 04/30/2020
• Est. Priority Date: 05/02/2017
• Status: Active Grant

• Current Assignee: Nissan Chemical Corporation
• Original Assignee: Nissan Chemical Corporation
• Inventors: TOKUNAGA, Hikaru, HASHIMOTO, Yuto, HASHIMOTO, Keisuke, SAKAMOTO, Rikimaru
• Granted Patent: US 10,894,887 B2
• Time in Patent Office: Days
• CPC Class Codes: C08G 73/02 Polyamines
• CPC Class Codes: C08G 73/0644 Poly(1,3,5)triazines
• CPC Class Codes: C08K 5/053 Polyhydroxylic alcohols
• CPC Class Codes: C08K 5/13 Phenols; Phenolates
• CPC Class Codes: C08K 5/132 Phenols containing keto groups , e.g. benzophenones
• CPC Class Codes: C08L 101/00 Compositions of unspecified macromolecular compounds
• CPC Class Codes: C09D 133/066 containing -OH groups
• CPC Class Codes: C09D 133/14 of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
• CPC Class Codes: C09D 161/18 Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or their halogen derivatives only
• CPC Class Codes: C09D 175/14 Polyurethanes having carbon-to-carbon unsaturated bonds
• CPC Class Codes: C09D 179/02 Polyamines
• CPC Class Codes: C09D 4/00 Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
• CPC Class Codes: C09D 5/00 Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced electrically insulating plastics, resins or waxes H01B3/30; Filling pastes
• CPC Class Codes: C09D 7/63 organic
• CPC Class Codes: C09K 13/00 Etching, surface-brightening or pickling compositions for glass C03C15/00, C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338 ; for metallic material C23F, C23G1/00, C25F1/00; for semi-conductors H01L
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/0271 : comprising organic layers
• CPC Class Codes: H01L 21/0273 : characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/31138 : by dry-etching
• CPC Class Codes: H01L 21/31144 : using masks

Abstract

There is provided a composition for forming a protective film against an aqueous hydrogen peroxide solution, the composition comprising a resin; a compound of the following Formula (1a), (1b), or (1c):

• • (wherein X is a carbonyl group or a methylene group; 1 and m are each independently an integer of 0 to 5 so as to satisfy the relation: 3≤1+m≤10; n is an integer of 2 to 5; u and v are each independently an integer of 0 to 4 so as to satisfy the relation: 3≤u+v≤8; R¹, R², R³, and R⁴ are each independently a hydrogen atom, a hydroxy group, a C_1-10 hydrocarbon group optionally having at least one hydroxy group as a substituent and optionally having at least one double bond in a main chain, or a C_6-20 aryl group optionally having at least one hydroxy group as a substituent; when R¹, R², R³, and R⁴ are each the
• C_1-10 hydrocarbon group, R¹ and R² optionally form a benzene ring together with a ring carbon atom to which R¹ and R² are bonded, R³ and R⁴ optionally form a benzene ring together with a ring carbon atom to which R³ and R⁴ are bonded, or the benzene ring optionally has at least one hydroxy group as a substituent; and j and k are each independently 0 or 1); a crosslinking agent; a crosslinking catalyst; and a solvent, wherein the amount of the compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to the amount of the resin, and the amount of the crosslinking agent is 5% by mass to 40% by mass relative to the amount of the resin.

Claims

1. A composition for forming a protective film against an aqueous hydrogen peroxide solution, the composition comprising a resin;

a compound of the following Formula (1a), (1b), or (1c);

2. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1, wherein the resin is a polymer having a weight average molecular weight of 1,000 or more.

3. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1, wherein the resin is a monomer having a molecular weight of 600 or less.

4. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 3, wherein the monomer is a compound of the following Formula (2):

Ar-Q-Ar 

 

(2)

wherein each Ar is an aryl group, and the aryl group has at least one hydroxy group as a substituent; and

Q is a methylene group or a divalent linking group having at least one benzene ring or naphthalene ring.

5. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1, wherein the compound of Formula (1a) is any of compounds of the following Formulae (1a-1) to (1a-5);

the compound of Formula (1b) is a compound of the following Formula (1b-1) or (1b-2); and

the compound of Formula (1c) is a compound of the following Formula (1c-1).

6. The composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1, wherein the composition is a composition for forming a resist underlayer film.

7. A pattern forming method comprising forming a protective film, on a semiconductor substrate optionally having an inorganic film formed on its surface, from the composition for forming a protective film against an aqueous hydrogen peroxide solution according to claim 1;

forming a resist pattern on the protective film;

dry-etching the protective film with the resist pattern serving as a mask, to thereby expose the surface of the inorganic film or the semiconductor substrate;

wet-etching the inorganic film or the semiconductor substrate with the dry-etched protective film serving as a mask by using an aqueous hydrogen peroxide solution; and

washing the wet-etched inorganic film or semiconductor substrate.