ETCHING COMPOSITION ADDITIVE, METHOD FOR PREPARING THE SAME AND ETCHING COMPOSITION COMPRISING THE SAME

• US 20200131438A1
• Filed: 10/07/2019
• Published: 04/30/2020
• Est. Priority Date: 10/25/2018
• Status: Active Grant

• Current Assignee: SK Inc., SK Innovation Company Limited
• Original Assignee: SK Innovation Company Limited
• Inventors: KIM, Cheol Woo, SHIM, Yu Na, LEE, Je Ho, KWAK, Jae Hoon, KIM, Young Bom, JO, Jin Kyung
• Granted Patent: US 10,941,341 B2
• Time in Patent Office: Days
• CPC Class Codes: C09K 13/00 Etching, surface-brightening or pickling compositions for glass C03C15/00, C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338 ; for metallic material C23F, C23G1/00, C25F1/00; for semi-conductors H01L
• CPC Class Codes: C09K 13/04 containing an inorganic acid
• CPC Class Codes: C09K 13/06 with organic material
• CPC Class Codes: C23F 1/16 Acidic compositions C23F1/42 takes precedence
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]

Abstract

An etching composition providing a high selection ratio enabling selective removal of a nitride film and minimization of an etching rate, a preparation method thereof, an etching composition additive prepared through a reaction of phosphoric anhydride and a silane compound represented by Formula 1 below, a method for preparing the same and an etching composition including the same are provided:

Claims

1. An etching composition additive comprising phosphoric acid and a silane compound represented by Formula 1 below:

2. The etching composition additive of claim 1, wherein the R¹ to R³ are independently C₁-C₂₀ alkoxy.

3. The etching composition additive of claim 1, wherein the A is C₁-C₂₀ hydrocarbylene, an amine salt radical, a radical having N as a binding site, a radical having O as a binding site, a radical having S as a binding site or a radical having P as a binding site.

4. The etching composition additive of claim 1, wherein the A is *—

N⁺(R¹³R¹²)X₁—

*,

5. The etching composition of claim 1, wherein n is 2 or 3.

6. The etching composition of claim 1, wherein the silane compound is at least one selected from following Structural Formulae 1 to 26:

7. The etching composition additive of claim 1, wherein the phosphoric anhydride is at least one selected from the group consisting of water-removed pure phosphoric acid, pyrophsphoric acid, polyphosphoric acid having at least 3Ps and metaphosphoric acid.

8. The etching composition additive of claim 1, wherein the etching composition additive is produced through a reaction of 0.1 part by weight to 10 parts by weight of the silane compound based on 100 parts by weight of the phosphoric anhydride.

17. An etching composition, comprising

a phosphoric acid;

the etching composition additive of claim 1; and

a solvent.

18. The etching composition of claim 17, wherein the etching composition additive comprises a silyl phosphate in an amount of 0.01 wt % to 10 wt %.

19. The etching composition of claim 17, wherein the etching composition comprises 70 wt % to 89 wt % phosphoric acid, 0.01 wt % to 10 wt % etching composition additive and 11 wt % to 30 wt % solvent.

20. The etching composition of claim 17, further comprising a silane compound represented by Formula 2 below:

[Formula 2]

9. A method for preparing an etching composition additive, comprising:

preparing a mixture comprising phosphoric anhydride and a silane compound of Formula 1; and

reacting the mixture to prepare a silyl phosphate compound;

10. The method of claim 9, wherein the R¹ to R³ are independently C₁-C₂₀ alkoxy.

11. The method of claim 9, wherein the A is C₁-C₂₀ hydrocarbylene, an amine salt radical, a radical having N as a binding site, a radical having O as a binding site, a radical having S as a binding site or a radical having P as a binding site.

12. The method of claim 11, wherein the A is *—

N⁺(R¹¹R¹²)X₁⁻

—

*,

13. The method of claim 9, wherein n is 2 or 3.

14. The method of claim 9, wherein the silane compound is at least one selected from following Structural Formulae 1 to 26:

15. The method of claim 9, wherein the phosphoric anhydride is at least one selected from the group consisting of water-removed pure phosphoric acid, pyrophsphoric acid, polyphosphoric acid having at least 3Ps and metaphosphoric acid.

16. The method of claim 9, wherein the etching composition additive comprises 100 parts by weight of the phosphoric anhydride and 0.1 part by weight to 10 parts by weight of the silane compound based on 100 parts by weight of the phosphoric anhydride.