Direct-Deposition System Including Standoffs for Controlling Substrate-Mask Separation
First Claim
1. A direct-deposition system for forming a patterned layer of a first material on a substrate by depositing the first material onto the substrate through a shadow mask, wherein the system comprises:
- a first chuck for holding the substrate;
a second chuck for holding the shadow mask; and
a plurality of standoffs that are configured to establish a first separation between the shadow mask and the substrate.
1 Assignment
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Accused Products
Abstract
The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.
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22 Claims
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1. A direct-deposition system for forming a patterned layer of a first material on a substrate by depositing the first material onto the substrate through a shadow mask, wherein the system comprises:
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a first chuck for holding the substrate; a second chuck for holding the shadow mask; and a plurality of standoffs that are configured to establish a first separation between the shadow mask and the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A direct-deposition system for forming a patterned layer of a first material on a substrate by depositing the first material onto the substrate through a shadow mask, wherein the system comprises:
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a first chuck for holding the substrate; a second chuck for holding the shadow mask; a plurality of standoffs that is configured to establish a first separation between the shadow mask and the substrate; and an alignment system configured to establish a second separation between the shadow mask and substrate, the second separation being based on the first separation. - View Dependent Claims (11, 12, 13, 14)
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15. A method for forming a patterned layer of a first material on a substrate by depositing the first material onto the substrate through a shadow mask, wherein the method comprises:
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providing the substrate such that it includes a first surface that defines a first plane; providing the shadow mask such that it includes a plurality of apertures that extend through the shadow mask from a second surface that defines a second plane; providing a plurality of standoffs having a first height; mounting the substrate in a first chuck; mounting the substrate in a second chuck; and establishing a first separation between the first plane and second plane based on the first height, wherein the first separation is established such that the first plane and second plane are substantially parallel. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification