FUNCTIONALLY INTEGRATED COATING STRUCTURES

• US 20200131619A1
• Filed: 05/30/2018
• Published: 04/30/2020
• Est. Priority Date: 06/19/2017
• Status: Active Grant

• Current Assignee: Technetics Group LLC (Enpro Industries Incorporated)
• Original Assignee: Technetics Group LLC (Enpro Industries Incorporated)
• Inventors: Kalkhoran, Nader, Tobin, Eric, Egge, Tim, Burns, Jason, Oliver, Rick, McFadden, Angus, Wright, Jason
• Granted Patent: US 11,718,905 B2
• Time in Patent Office: Days
• CPC Class Codes: B32B 3/00 Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
• CPC Class Codes: C23C 14/0694 Halides
• CPC Class Codes: C23C 14/081 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/221 Ion beam deposition C23C14/46, C23C14/48 take precedence
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23C 28/042 including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
• CPC Class Codes: C23C 28/42 characterized by the composition of the alternating layers
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32715 Workpiece holder

Abstract

Techniques for depositing a functionally integrated coating structure on a substrate are provided. An example method according to the disclosure includes receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system, disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3), disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is Yttrium Oxide (Y2O3), and disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Yttrium Fluoride (YF3).

Claims

1. A method of depositing a functionally integrated coating structure on a substrate, comprising:

receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system;

disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3) at a deposition rate of between 1 and 10 angstroms per second and the first ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is Yttrium Oxide (Y2O3) at a deposition rate of between 1 and 10 angstroms per second and the second ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter; and

disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Yttrium Fluoride (YF3) at a deposition rate of between 1 and 10 angstroms per second and the third ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter.

2. The method of claim 1 further comprising outputting the substrate from the process chamber of the multi-process ion beam assisted deposition system.

3. The method of claim 1 further comprising:

securing the second ion beam;

disposing a second shutter assembly over the second evaporator species, wherein the second shutter assembly is configured to inhibit the evaporation of the second evaporator species;

securing the third ion beam;

disposing a third shutter assembly over the third evaporator species, wherein the third shutter assembly is configured to inhibit the evaporation of the third evaporator species;

wherein disposing the substrate in the first zone, disposing the substrate in the second zone and disposing the substrate in the third zone includes orbiting the substrate for a plurality of consecutive orbits through each of the first zone, the second zone and the third zone.

4. The method of claim 3 further comprising:

activating the second ion beam;

disposing the second shutter assembly away from the second evaporator species, wherein the second shutter assembly does not inhibit the evaporation of the second evaporator species;

increasing the deposition rate in the second zone from zero angstroms per second to 1 to 10 angstroms per second, wherein the deposition rate in the second zone increases relative to the consecutive orbits of the substrate through the second zone;

decreasing the deposition rate in the first zone from 1 to 10 angstroms per second to less than 0.1 angstroms per second, wherein the deposition rate in the first zone decreases relative to the consecutive orbits of the substrate through the first zone;

securing the first ion beam; and

disposing a first shutter assembly over the first evaporator species, wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species.

5. The method of claim 4 further comprising:

activating the third ion beam;

disposing the third shutter assembly away from the third evaporator species, wherein the third shutter assembly does not inhibit the evaporation of the third evaporator species;

increasing the deposition rate in the third zone from zero angstroms per second to 1 to 10 angstroms per second, wherein the deposition rate in the third zone increases relative to consecutive orbits of the substrate through the third zone;

decreasing the deposition rate in the second zone from 1 to 10 angstroms per second to less than 0.1 angstroms per second, wherein the deposition rate in the second zone decreases relative to consecutive orbits of the substrate through the second zone;

securing the second ion beam; and

disposing the second shutter assembly over the second evaporator species to inhibit the evaporation of the second evaporator species.

6. The method of claim 3 further comprising:

securing the first ion beam;

disposing a first shutter assembly over the first evaporator species, wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species;

activating the second ion beam;

disposing the second shutter assembly away from the second evaporator species, wherein the second shutter assembly does not inhibit the evaporation of the second evaporator species;

activating the third ion beam;

disposing the third shutter assembly away from the third evaporator species, wherein the third shutter assembly does not inhibit the evaporation of the third evaporator species.

7. The method of claim 1 wherein the substrate is an electrostatic chuck for a plasma processing chamber.

8. The method of claim 1 further comprising providing an oxygen backfill gas to the process chamber.

9. A process chamber for depositing a functionally integrated coating structure on a substrate, comprising:

a first process zone including a first evaporator containing a first evaporator species and a first ion source configured to produce a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3) at a deposition rate of between 1 and 10 angstroms per second and the first ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

a second process zone including a second evaporator containing a second evaporator species and a second ion source configured to produce a second ion beam, wherein the second evaporator species includes Yttrium Oxide (Y2O3) at a deposition rate of between 1 and 10 angstroms per second and the second ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter; and

a third process zone including a third evaporator containing a third evaporator species and third ion source configured to produce a third ion beam, wherein the third evaporator species is Zirconium Oxide (ZrO2) at a deposition rate between 1 and 10 angstroms per second and the third ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter.

10. The process chamber of claim 9 further comprising a substrate handler configured to sequentially orbit the substrate through the first process zone, the second process zone, and the third process zone.

11. The process chamber of claim 10 wherein the substrate handler is configured to rotate about a first axis such that the substrate may pass sequentially through the first process zone, the second process zone, and the third process zone.

12. The process chamber of claim 11 wherein the substrate handler includes at least one substrate holder configured to rotate about a holder axis that is different from the first axis.

13. The process chamber of claim 12 further comprising:

a first shutter assembly configured to either allow or inhibit the evaporation of the first evaporator species;

a second shutter assembly configured to either allow or inhibit the evaporation of the second evaporator species; and

a third shutter assembly configured to either allow or inhibit the evaporation of the third evaporator species.

14. The process chamber of claim 13 wherein the first shutter assembly is configured to allow the evaporation of the first evaporator species, the second shutter assembly is configured to inhibit the evaporation of the second evaporator species, and the third shutter assembly is configured to inhibit the evaporation of the third evaporator species.

15. The process chamber of claim 13 wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species, the second shutter assembly is configured to allow the evaporation of the second evaporator species, and the third shutter assembly is configured to inhibit the evaporation of the third evaporator species.

16. The process chamber of claim 13 wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species, the second shutter assembly is configured to inhibit the evaporation of the second evaporator species, and the third shutter assembly is configured to allow the evaporation of the third evaporator species.

17. The process chamber of claim 13 wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species, the second shutter assembly is configured to allow the evaporation of the second evaporator species, and the third shutter assembly is configured to allow the evaporation of the third evaporator species.

18. An apparatus for depositing a functionally integrated coating structure on a substrate, comprising:

means for receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system;

means for disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3) at a deposition rate between 1 and 10 angstroms per second and the first ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

means for disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species includes Yttrium Oxide (Y2O3) at a deposition rate of between 1 and 10 angstroms per second and the second ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

means for disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Zirconium Oxide (ZrO2) at a deposition rate of between 1 and 10 angstroms per second and the third ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter; and

means for outputting the substrate from the process chamber of the multi-process ion beam assisted deposition system.

19. The apparatus of claim 18 further comprising means for shuttering one or more of the first, the second or the third evaporator species.

20. The apparatus of claim 18 further comprising means for providing an oxygen backfill gas to the process chamber.

21. A process chamber for depositing a functionally integrated coating structure on a substrate, comprising:

a first process zone including a first evaporator containing a first evaporator species and a first ion source configured to produce a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3) at a deposition rate of between 1 and 10 angstroms per second and the first ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

a second process zone including a second evaporator containing a second evaporator species and a second ion source configured to produce a second ion beam, wherein the second evaporator species includes Yttrium Oxide (Y2O3) at a deposition rate of between 1 and 10 angstroms per second and the second ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter; and

a third process zone including a third evaporator containing a third evaporator species and third ion source configured to produce a third ion beam, wherein the third evaporator species is Yttrium Oxide (Y2O3) at a deposition rate between 1 and 10 angstroms per second and the third ion beam includes a gas with an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 20 and 150 micro-amps per square centimeter.

22. The process chamber of claim 21 further comprising a substrate handler configured to sequentially orbit the substrate through the first process zone, the second process zone, and the third process zone.

23. The process chamber of claim 22 further comprising:

a first shutter assembly configured to either allow or inhibit the evaporation of the first evaporator species;

a second shutter assembly configured to either allow or inhibit the evaporation of the second evaporator species; and

a third shutter assembly configured to either allow or inhibit the evaporation of the third evaporator species.

24. The process chamber of claim 23 wherein the first shutter assembly is configured to allow the evaporation of the first evaporator species, the second shutter assembly is configured to inhibit the evaporation of the second evaporator species, and the third shutter assembly is configured to inhibit the evaporation of the third evaporator species.

25. The process chamber of claim 23 wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species, the second shutter assembly is configured to allow the evaporation of the second evaporator species, and the third shutter assembly is configured to allow the evaporation of the third evaporator species.

26. The process chamber of claim 21 wherein a boron dopant is mixed into the third ion beam gas.

27. The process chamber of claim 21 wherein a boron dopant introduced via a backfill gas to the process chamber.

28. A process chamber for depositing a functionally integrated coating structure on a substrate, comprising:

a first process zone including a first multi-pocket evaporator containing one or more of a first set of evaporator species selected from among Aluminum Oxide (Al2O3), Yttrium Oxide (Y2O3), Yttrium Fluoride (YF3), and Zirconium Oxide (ZrO2), whereby one of the species is deposited at a rate of between 1 and 10 angstroms per second, and a first ion source configured to produce a first ion beam, which includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

a second process zone including a second multi-pocket evaporator containing one or more of a second set of evaporator species selected from among Aluminum Oxide (Al2O3), Yttrium Oxide (Y2O3), Yttrium Fluoride (YF3), and Zirconium Oxide (ZrO2), whereby one of the species is deposited at a rate of between 1 and 10 angstroms per second, and a second ion source configured to produce a second ion beam, which includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter; and

a third process zone including a third multi-pocket evaporator containing one or more of a third set of evaporator species selected from among Aluminum Oxide (Al2O3), Yttrium Oxide (Y2O3), Yttrium Fluoride (YF3), and Zirconium Oxide (ZrO2), whereby one of the species is deposited at a time at a rate of between 1 and 10 angstroms per second, and a third ion source configured to produce a third ion beam, which includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter.

29. The process chamber of claim 28 further comprising:

a first shutter assembly configured to either allow or inhibit the evaporation of one of the evaporator species selected from among the first set of evaporator species;

a second shutter assembly configured to either allow or inhibit the evaporation of one of the evaporator species selected from among the second set of evaporator species; and

a third shutter assembly configured to either allow or inhibit the evaporation of one of the evaporator species selected from among the third set of evaporator species.

30. The process chamber of claim 28 further comprising mass flow controller for providing an oxygen backfill gas to the process chamber.

31. The process chamber of claim 28 further comprising a substrate handler configured to sequentially orbit the substrate through the first process zone, the second process zone, and the third process zone.

32. The process chamber of claim 31 wherein the substrate handler is configured to rotate about a first axis such that the substrate may pass sequentially through the first process zone, the second process zone, and the third process zone.

33. The process chamber of claim 32 wherein the substrate handler includes at least one substrate holder configured to rotate about a holder axis that is different from the first axis.

34. A method of depositing a functionally integrated coating structure on a substrate, comprising:

receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system;

disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is selected from among Aluminum Oxide (Al2O3), Yttrium Oxide (Y2O3), Yttrium Fluoride (YF3), and Zirconium Oxide (ZrO2), Aluminum Oxide (Al2O3) deposited at a rate of between 1 and 10 angstroms per second, and the first ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is selected from among Aluminum Oxide (Al2O3), Yttrium Oxide (Y2O3), Yttrium Fluoride (YF3), and Zirconium Oxide (ZrO2), Aluminum Oxide (Al2O3) deposited at a rate of between 1 and 10 angstroms per second, and the second ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter;

disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is selected from among Aluminum Oxide (Al2O3), Yttrium Oxide (Y2O3), Yttrium Fluoride (YF3), and Zirconium Oxide (ZrO2), Aluminum Oxide (Al2O3) deposited at a rate of between 1 and 10 angstroms per second, and the third ion beam includes an Argon or Oxygen gas at an energy between 500 and 2000 electronvolts and a current density between 50 and 150 micro-amps per square centimeter; and

orbiting the substrate for a plurality of passes through each of the first zone, the second zone and the third zone.

35. The method of claim 34 comprising outputting the substrate from the process chamber of the multi-process ion beam assisted deposition system.

36. The method of claim 34 further comprising:

securing the second ion beam;

disposing a second shutter assembly over the second evaporator species, wherein the second shutter assembly is configured to inhibit the evaporation of the second evaporator species;

securing the third ion beam;

disposing a third shutter assembly over the third evaporator species, wherein the third shutter assembly is configured to inhibit the evaporation of the third evaporator species;

wherein disposing the substrate in the first zone, disposing the substrate in the second zone and disposing the substrate in the third zone includes orbiting the substrate for a plurality of consecutive passes through each of the first zone, the second zone and the third zone.

37. The method of claim 36 further comprising:

activating the second ion beam;

disposing the second shutter assembly away from the second evaporator species, wherein the second shutter assembly does not inhibit the evaporation of the second evaporator species;

increasing the deposition rate in the second zone from zero angstroms per second to 1 to 10 angstroms per second, wherein the deposition rate in the second zone increases relative to the consecutive orbits of the substrate through the second zone;

decreasing the deposition rate in the first zone from 1 to 10 angstroms per second to less than 0.1 angstroms per second, wherein the deposition rate in the first zone decreases relative to consecutive orbits of the substrate through the first zone;

securing the first ion beam; and

disposing a first shutter assembly over the first evaporator species, wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species.

38. The method of claim 37 further comprising:

activating the third ion beam;

disposing the third shutter assembly away from the third evaporator species, wherein the third shutter assembly does not inhibit the evaporation of the third evaporator species;

increasing the deposition rate in the third zone from zero angstroms per second to 1 to 10 angstroms per second, wherein the deposition rate in the third zone increases relative to consecutive orbits of the substrate through the third zone;

decreasing the deposition rate in the second zone from 1 to 10 angstroms per second to less than 0.1 angstroms per second, wherein the deposition rate in the second zone decreases relative to consecutive orbits of the substrate through the second zone;

securing the second ion beam; and

disposing the second shutter assembly over the second evaporator species to inhibit the evaporation of the second evaporator species.

39. The method of claim 36 further comprising:

securing the first ion beam;

disposing a first shutter assembly over the first evaporator species, wherein the first shutter assembly is configured to inhibit the evaporation of the first evaporator species;

activating the second ion beam;

disposing the second shutter assembly away from the second evaporator species, wherein the second shutter assembly does not inhibit the evaporation of the second evaporator species;

activating the third ion beam;

disposing the third shutter assembly away from the third evaporator species, wherein the third shutter assembly does not inhibit the evaporation of the third evaporator species.

40. The method of claim 34 wherein the substrate is an electrostatic chuck for a plasma processing chamber.

41. The method of claim 34 further comprising providing an oxygen backfill gas to the process chamber.

42. A method of depositing a functionally integrated coating structure on a substrate for use in a semiconductor plasma processing system, comprising:

delivering the substrate into a process chamber of an ion beam assisted deposition system;

supplying a first evaporator species of Yttrium Oxide (Y₂O₃) into the process chamber;

employing ion beam assisted deposition to deposit a layer of the first evaporator species of Yttrium Oxide (Y₂O₃) on the substrate;

supplying a second evaporator species of Yttrium Fluoride (YF₃) into the process chamber; and

employing ion beam assisted deposition to deposit a layer of the second evaporator species of Yttrium Fluoride (YF₃) on the substrate.

43. The method of claim 42, wherein the substrate is an electrostatic chuck.

44. The method of claim 42, further comprising introducing a boron dopant into the ion beam assisted deposition chamber as part of employing ion beam assisted deposition to deposit the layer of first evaporator species of Yttrium Oxide (Y₂O₃) on the substrate, as part of employing ion beam deposition to deposit the layer of the second evaporator species of Yttrium Fluoride (YF₃) on the substrate, or both.

45. A method of depositing a functionally integrated coating structure on a substrate for use in a semiconductor plasma processing system, comprising:

delivering the substrate into a process chamber of an ion beam assisted deposition system;

supplying a first evaporator species of Yttrium Oxide (Y₂O₃) into the process chamber;

employing ion beam assisted deposition to deposit a first layer of the first evaporator species of Yttrium Oxide (Y₂O₃) on the substrate;

supplying a second evaporator species of Yttrium Oxide (Y₂O₃) into the process chamber; and

employing ion beam assisted deposition to deposit a second layer of the second evaporator species of Yttrium Oxide (Y₂O₃) on the substrate using ion beam assisted deposition.

46. The method of claim 45, wherein the substrate is an electrostatic chuck.

47. The method of claim 45, further comprising introducing a boron dopant into the ion beam assisted deposition chamber as part of employing ion beam assisted deposition to deposit the first layer of first evaporator species of Yttrium Oxide (Y₂O₃) on the substrate, as part of employing ion beam assisted deposition to deposit the second layer of the second evaporator species of Yttrium Oxide (Y₂O₃) on the semiconductor substrate, or both.