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Spatial Wafer Processing With Improved Temperature Uniformity

  • US 20200131635A1
  • Filed: 10/21/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/29/2018
  • Status: Active Grant
First Claim
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1. A processing chamber comprising:

  • a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature;

    a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature; and

    a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station,wherein the first face is spaced a first distance from the plurality of substantially coplanar support surfaces and the second face is spaced a second distance from the plurality of substantially coplanar support surfaces, and the first emissivity is lower than the second emissivity and/or the first temperature is greater than the second temperature.

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