STITCHING TWO-DIMENSIONAL ATOMIC CRYSTALS BY ATOMIC LAYER DEPOSITION AS STABLE INTERFACES FOR BATTERIES

• US 20200131638A1
• Filed: 06/19/2018
• Published: 04/30/2020
• Est. Priority Date: 06/23/2017
• Status: Active Grant

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Inventors: CUI, Yi, XIE, Jin, LIAO, Lei
• Granted Patent: US 11,499,228 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/45555 applied in non-semiconductor technology
• CPC Class Codes: H01M 10/052 Li-accumulators
• CPC Class Codes: H01M 4/0428 Chemical vapour deposition
• CPC Class Codes: H01M 4/666 in the form of mixed materials H01M4/668 takes precedence
• CPC Class Codes: H01M 4/667 in the form of layers, e.g. coatings
• CPC Class Codes: H01M 4/668 Composites of electroconductive material and synthetic resins
• CPC Class Codes: Y02E 60/10 Energy storage using batteries

Abstract

An anode includes: (1) a current collector; and (2) an interfacial layer disposed over the current collector. The interfacial layer includes a film of a layered material and a reinforcing material selectively disposed over certain regions of the film, while other regions of the film remain exposed from the reinforcing material.

Claims

1. An anode comprising:

a current collector; and

an interfacial layer disposed over the current collector,

wherein the interfacial layer includes a film of a layered material and a reinforcing material selectively disposed over certain regions of the film, while other regions of the film remain exposed from the reinforcing material.

2. The anode of claim 1, wherein the film includes defect sites, and the reinforcing material is selectively disposed over the defect sites.

3. The anode of claim 1, wherein the layered material includes hexagonal boron nitride, graphene, a layered transition metal oxide, or a layered transition metal chalcogenide.

4. The anode of claim 1, wherein the film is polycrystalline.

5. The anode of claim 1, wherein the reinforcing material includes a compound including at least one metal and at least one non-metal.

6. The anode of claim 5, wherein the compound is a metal fluoride, a metal oxide, or a metal nitride.

7. The anode of claim 5, wherein the compound is an alkali metal fluoride.

8. The anode of claim 5, wherein the compound is lithium fluoride.

9. The anode of claim 1, wherein the reinforcing material is disposed as nanostructures over the film.

10. The anode of claim 1, wherein the reinforcing material is disposed as discrete coating regions that are spaced apart from one another over the film.

11. The anode of claim 1, further comprising an anode material disposed between the current collector and the interfacial layer.

12. The anode of claim 11, wherein the anode material is lithium metal.

13. A battery comprising:

the anode of claim 1;

a cathode; and

an electrolyte disposed between the anode and the cathode.

14. A method of forming an anode for a battery, comprising:

providing a current collector and a film of a layered material disposed over the current collector; and

performing atomic layer deposition to deposit a reinforcing material selectively on certain regions of the film, while other regions of the film remain exposed from the reinforcing material.

15. The method of claim 14, wherein providing the current collector and the film includes forming the film, via chemical vapor deposition, over a substrate, and transferring the film from the substrate to the current collector.

16. The method of claim 14, wherein the layered material includes hexagonal boron nitride, graphene, a layered transition metal oxide, or a layered transition metal chalcogenide.

17. The method of claim 14, wherein the reinforcing material includes a compound including at least one metal and at least one non-metal, and performing atomic layer deposition includes sequentially performing a first atomic layer deposition cycle to introduce a chemical precursor including the metal, followed by performing a second atomic layer deposition cycle to introduce a chemical precursor including the non-metal.

18. The method of claim 17, wherein the compound is a metal fluoride, a metal oxide, or a metal nitride.

19. The method of claim 14, wherein the reinforcing material provides a surface coverage of the film of up to 60%.