PACKAGE STRUCTURE FOR OPTICAL FIBER AND METHOD FOR FORMING THE SAME

• US 20200132949A1
• Filed: 12/21/2018
• Published: 04/30/2020
• Est. Priority Date: 10/30/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Huang, Sung-Hui, Lai, Jui-Hsieh, Hou, Shang-Yun
• Granted Patent: US 10,656,351 B1
• Time in Patent Office: Days
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/4224 using visual alignment markings, e.g. index methods
• CPC Class Codes: G02B 6/428 containing printed circuit boards [PCB]
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes

Abstract

A package structure is provided. The package structure includes an optical component over a substrate, and a reflector disposed over the substrate. The reflector includes a first semiconductor layer over a second semiconductor layer, and a dielectric layer between the first semiconductor layer and the second semiconductor layer. The reflector also includes a metal layer between the second semiconductor layer and the substrate. In addition, the package structure includes a waveguide between the metal layer and the optical component.

Claims

1. A package structure, comprising:

an optical component over a substrate;

a reflector disposed over the substrate, wherein the reflector comprises;

a first semiconductor layer over a second semiconductor layer;

a dielectric layer between the first semiconductor layer and the second semiconductor layer; and

a metal layer between the second semiconductor layer and the substrate;

a waveguide between the metal layer and the optical component; and

a passivation layer covering the optical component and the waveguide, wherein a portion of the passivation layer is directly under the metal layer of the reflector.

2. The package structure as claimed in claim 1, wherein the metal layer has an inversed V-shaped cross-section.

3. The package structure as claimed in claim 1, wherein a bottom surface of the metal layer is substantially level with a bottom surface of the second semiconductor layer.

4. The package structure as claimed in claim 1, wherein the first semiconductor layer has an outer portion and an inner portion surrounded by the outer portion, and the inter portion is separated from the outer portion by a portion of the dielectric layer.

6. The package structure as claimed in claim 1, wherein the reflector further comprises a polymer layer between the second semiconductor layer and the substrate, the metal layer is sandwiched between the second semiconductor layer and polymer layer, and a portion of the polymer layer protrudes from the substrate to the second semiconductor layer.

7. The package structure as claimed in claim 1, further comprising:

an electronic component over the substrate; and

a chip disposed over the electronic component, wherein the optical component is electrically connected to the chip through the electronic component.

8. The package structure as claimed in claim 1, wherein the first semiconductor layer is penetrated by an opening in the first semiconductor layer, and the opening is surrounded by a portion of the dielectric layer, and wherein the opening is configured to be inserted by an optical fiber.

25. The package structure as claimed in claim 8, wherein a center axis of the opening is shifted from a tip of the metal layer.

5. (canceled)

9. A package structure, comprising:

an optical component and a first waveguide over a surface of a substrate;

a passivation layer covering the optical component and the first waveguide;

a reflector disposed over the surface of the substrate, wherein the reflector comprises;

a first semiconductor layer over the passivation layer;

a second semiconductor layer surrounded by the passivation layer, wherein the first semiconductor layer is over the second semiconductor layer; and

a metal layer surrounded by the second semiconductor layer,

wherein the first waveguide is between the metal layer and the optical component.

10. The package structure as claimed in claim 9, wherein the metal layer has a first tilted sidewall, a second tilted sidewall, and a tip intersected by the first tilted sidewall and the second tilted sidewall, and

wherein a first angle between the first tilted sidewall and a bottom surface of the second semiconductor layer is substantially the same as a second angle between the second tilted sidewall and the bottom surface of the second semiconductor layer.

11. The package structure as claimed in claim 10, wherein the first angle is in a range from about 40 degrees to about 70 degrees.

12. The package structure as claimed in claim 9, further comprising:

a second waveguide over the surface of the substrate, wherein the first waveguide and the second waveguide are at two opposite sides of the metal layer.

13. The package structure as claimed in claim 9, wherein the reflector further comprises a dielectric layer, and wherein the first semiconductor layer is divided into an inner portion and an outer portion by a portion of the dielectric layer, the inner portion is in direct contact with the second semiconductor layer, and the outer portion is separated from the second semiconductor layer by another portion of the dielectric layer.

14. The package structure as claimed in claim 9, wherein there is a space enclosed by the metal layer and the passivation layer, and the space is a triangular prism or a square pyramid.

15. The package structure as claimed in claim 9, wherein the reflector further comprises a polymer layer below the second semiconductor layer, wherein a portion of the polymer layer directly under the metal layer is a triangular prism or a square pyramid.

16. The package structure as claimed in claim 9, further comprising:

a chip disposed over the passivation layer and adjacent to the first semiconductor layer of the reflector; and

an interconnect structure formed in the passivation layer, wherein the optical component is electrically connected to the chip through the interconnect structure.

17-20. -20. (canceled)

21. A package structure, comprising:

a waveguide over a substrate,

a reflector over the substrate and adjacent to the waveguide, wherein the reflector comprises a metal layer having an inversed V-shaped cross-section, and a semiconductor layer covering the metal layer;

an optical component over the substrate, wherein the waveguide and a portion of the semiconductor layer are between the optical component and the metal layer;

a chip disposed over the optical component, wherein the optical component is electrically connected to the chip; and

a molding material surrounding the chip and another semiconductor layer over the semiconductor layer of the reflector.

22. The package structure as claimed in claim 21, further comprising:

a passivation layer covering the waveguide and the optical component, wherein a top surface of the semiconductor layer is higher than a top surface of the passivation layer.

23. The package structure as claimed in claim 22, wherein the top surface of the semiconductor layer is exposed by an opening.

26. The package structure as claimed in claim 23, wherein a center axis of the opening is aligned with a tip of the metal layer.

24. (canceled)