MONITORING OF MEMS MIRROR PROPERTIES

• US 20200132981A1
• Filed: 11/30/2018
• Published: 04/30/2020
• Est. Priority Date: 10/24/2018
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: VAN LIEROP, Hendrikus, HULSKER, Alexander, VERHEGGEN, Jaap
• Granted Patent: US 10,788,659 B2
• Time in Patent Office: Days
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: G01N 21/95 characterised by the material or shape of the object to be examined G01N21/89 - G01N21/91, G01N21/94 take precedence
• CPC Class Codes: G01S 17/894 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• CPC Class Codes: G01S 7/4813 Housing arrangements
• CPC Class Codes: G01S 7/4815 using multiple transmitters
• CPC Class Codes: G01S 7/4817 relating to scanning
• CPC Class Codes: G01S 7/4863 Detector arrays, e.g. charge-transfer gates
• CPC Class Codes: G01S 7/4865 Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak peak detection in noise, signal conditioning G01S7/487
• CPC Class Codes: G01S 7/497 Means for monitoring or calibrating
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: G02B 6/3514 the reflective optical element moving along a line so as to translate into and out of the beam path, i.e. across the beam path
• CPC Class Codes: G02B 6/3518 the reflective optical element being an intrinsic part of a MEMS device, i.e. fabricated together with the MEMS device MEMS devices in general B81B; manufacture of MEM devices in general B81C; micromechanical devices controlling the direction of light G02B26/0833
• CPC Class Codes: G02B 6/3584 constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching MEMS per se B81B, B81C

Abstract

Systems and methods are provided for monitoring properties of a microelectromechanical systems (MEMS) oscillating structure. A system includes a MEMS oscillating structure configured as a non-linear resonator to oscillate about a rotation axis; a driver configured to generate a driving force for driving the MEMS oscillating structure about the rotation axis according to an operating response curve during which the MEMS oscillating structure is in resonance, the driver further configured to decrease the driving force when the MEMS oscillating structure is at a predefined tilt angle to induce an oscillation decay of the MEMS oscillating structure; a measurement circuit configured to measure an oscillation frequency and a tilt angle amplitude of the MEMS oscillating structure during a decay period; and processing circuitry configured to determine at least one characteristic of the MEMS oscillating structure based on at least one of the measured oscillation frequency and the measured tilt angle amplitude.

Claims

1. A system, comprising:

a microelectromechanical systems (MEMS) oscillating structure configured as a non-linear resonator to oscillate about a rotation axis;

a driver configured to generate a driving force for driving the MEMS oscillating structure about the rotation axis according to an operating response curve during which the MEMS oscillating structure is in resonance, the driver further configured to decrease the driving force when the MEMS oscillating structure is at a predefined tilt angle to induce an oscillation decay of the MEMS oscillating structure over a decay period;

a measurement circuit configured to measure an oscillation frequency and a tilt angle amplitude of the MEMS oscillating structure during the decay period; and

at least one processor configured to determine at least one characteristic of the MEMS oscillating structure based on at least one of the measured oscillation frequency and the measured tilt angle amplitude.

2. The system of claim 1, wherein the oscillation frequency is a zero-angle frequency of the MEMS oscillating structure.

3. The system of claim 2, wherein measurement circuit is configured to measure the zero-angle frequency based on the MEMS oscillating structure oscillating through a zero-angle range during the oscillation decay.

4. The system of claim 3, wherein at least one processor is configured to compare the zero-angle frequency with an expected zero-angle frequency, and determine the at least one characteristic based on the comparison.

5. The system of claim 1, wherein the at least one processor is configured to measure the decay period based on at least one of the measured oscillation frequency and the measured tilt angle amplitude, compare the measured decay period with an expected decay period, and determine the at least one characteristic based on the comparison.

6. The system of claim 1, wherein the at least one characteristic is a damping factor of the MEMS oscillating structure or a Q-factor of the MEMS oscillating structure.

7. The system of claim 1, further comprising:

a MEMS package in which the MEMS oscillating structure is disposed,

wherein the at least one processor is configured to determine a pressure inside the MEMS package based on at least one of the measured oscillation frequency and the measured tilt angle amplitude, and

wherein the at least one processor is configured to compensate the measured oscillation frequency and the measured tilt angle amplitude based on the determined pressure.

8. The system of claim 1, further comprising:

a MEMS package in which the MEMS oscillating structure is disposed,

wherein the at least one processor is configured to detect a change in pressure inside the MEMS package based on at least one of the measured oscillation frequency and the measured tilt angle amplitude.

9. The system of claim 1, wherein the at least one processor is configured to generate a tilt angle amplitude decay curve based on the measured tilt angle amplitude, compare the tilt angle amplitude decay curve with a previous tilt angle amplitude decay curve, determine the at least one characteristic based on the comparison.

10. The system of claim 1, wherein the at least one processor is configured to generate a tilt angle amplitude decay curve based on the measured tilt angle amplitude, determine a first characteristic at a first region of the tilt angle amplitude decay curve, determine a second characteristic at a second region of the tilt angle amplitude decay curve, and determine the at least one characteristic based on the first characteristic and the second characteristic.

11. The system of claim 10, wherein the at least one processor is configured to compare the first characteristic and the second characteristic to predetermined values to generate a comparison result and to determine the at least one characteristic based on the comparison result.

12. The system of claim 1, wherein the at least one processor is configured to receive a temperature measurement from a temperature sensor, and compensate the measured oscillation frequency and the measured tilt angle amplitude based on the temperature measurement.

13. The system of claim 1, wherein the predefined tilt angle is a maximum tilt angle prior to a fallback point on the operating response curve.

14. The system of claim 1, wherein the driver is configured to turn off the driving force to induce the oscillation decay of the MEMS oscillating structure.

15. The system of claim 1, wherein the oscillation frequency of the MEMS oscillating structure increases non-linearly with an increase in the tilt angle amplitude.

16. The system of claim 1, further comprising:

at least one leaf spring assembly coupled to the MEMS oscillation structure and configured to provide torsional stiffness to the MEMS oscillating structure about the rotation axis such that the oscillation frequency of the MEMS oscillating structure increases non-linearly with an increase in the tilt angle amplitude.

23. The system of claim 1, wherein:

the driver is further configured to drive the MEMS oscillating structure in resonance about the rotation axis, and, while the MEMS oscillating structure is in resonance about the rotation axis, induce the oscillation decay of the MEMS oscillating structure about the rotation axis, and

the measurement circuit is configured to measure the oscillation frequency and the tilt angle amplitude of the MEMS oscillating structure during the oscillation decay of the MEMS oscillating structure.

24. The system of claim 1, wherein the decay period extends from a time the oscillation decay is induced to a time the MEMS oscillating structure reaches a standstill.

25. The system of claim 1, wherein the driver is further configured to:

in response to the MEMS oscillating structure crossing the predefined tilt angle while the MEMS oscillating structure is in resonance about the rotation axis, trigger a decrease in the driving force to induce the oscillation decay of the MEMS oscillating structure about the rotation axis.

26. The system of claim 25, wherein, in response to the MEMS oscillating structure crossing the predefined tilt angle while the MEMS oscillating structure is in resonance about the rotation axis, the measurement circuit is configured to measure the oscillation frequency and the tilt angle amplitude of the MEMS oscillating structure during the oscillation decay.

27. The system of claim 26, wherein the tilt angle amplitude of the MEMS oscillating structure oscillates between two extrema that are maintained substantially constant during resonance about the rotation axis and that are continuously decreased in magnitude for each successive oscillation of the MEMS oscillating structure during the oscillation decay about the rotation axis.

17. A method of monitoring a microelectromechanical systems (MEMS) oscillating structure, the method comprising:

driving the MEMS oscillating structure configured to oscillate about a rotation axis according to an operating response curve during which the MEMS oscillating structure is in resonance, wherein the MEMS oscillating structure is a non-linear resonator;

inducing an oscillation decay of the MEMS oscillating structure at predefined tilt angle such that an oscillation of the MEMS oscillating structure decays fully from the predefined tilt angle over a decay period;

measuring an oscillation frequency and a tilt angle amplitude of the MEMS oscillating structure during the decay period; and

determining at least one characteristic of the MEMS oscillating structure based on at least one of the measured oscillation frequency and the measured tilt angle amplitude.

18. The method of claim 17, wherein the oscillation frequency is a zero-angle frequency of the MEMS oscillating structure, the method further comprising:

measuring the zero-angle frequency based on the MEMS oscillating structure oscillating through a zero-angle range during the oscillation decay.

19. The method of claim 18, further comprising:

comparing the zero-angle frequency with an expected zero-angle frequency; and

determining the at least one characteristic based on the comparison.

20. The method of claim 17, wherein the at least one characteristic is a damping factor of the MEMS oscillating structure or a Q-factor of the MEMS oscillating structure.

21. The method of claim 17, further comprising:

generating a tilt angle amplitude decay curve based on the measured tilt angle amplitude;

comparing the tilt angle amplitude decay curve with a previous tilt angle amplitude decay curve; and

determining the at least one characteristic based on the comparison.

22. The method of claim 17, wherein the predefined tilt angle is a maximum tilt angle prior to a fallback point on the operating response curve.