PN-JUNCTION PHASE MODULATOR IN A LARGE SILICON WAVEGUIDE PLATFORM
First Claim
1. A modulator, comprising:
- a portion of an optical waveguide, the optical waveguide comprising a rib extending upwards from a surrounding slab;
the rib having a first sidewall, and a second sidewall parallel to the first sidewall;
the rib including a first region of a first conductivity type, a second region of a second conductivity type different from the first conductivity type, and a third region of the first conductivity type;
the second region having;
a first portion parallel to and extending to the first sidewall, anda second portion parallel to the second sidewall,the third region being parallel to and extending to the second sidewall;
the first region extending between the first portion of the second region and the second portion of the second region; and
the second portion of the second region being between the first region and the third region.
7 Assignments
0 Petitions
Accused Products
Abstract
A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.
12 Citations
18 Claims
-
1. A modulator, comprising:
-
a portion of an optical waveguide, the optical waveguide comprising a rib extending upwards from a surrounding slab; the rib having a first sidewall, and a second sidewall parallel to the first sidewall; the rib including a first region of a first conductivity type, a second region of a second conductivity type different from the first conductivity type, and a third region of the first conductivity type; the second region having; a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall, the third region being parallel to and extending to the second sidewall; the first region extending between the first portion of the second region and the second portion of the second region; and the second portion of the second region being between the first region and the third region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for fabricating a modulator on a semiconductor wafer, the method comprising:
-
performing a first ion implantation operation on a rib, the rib extending upwards from an upper surface of the semiconductor wafer and having a first sidewall, and a second sidewall parallel to the first sidewall; and performing a second ion implantation operation on the rib, wherein; the implantation angle of the first ion implantation operation is greater than 45 degrees, the implantation angle of the second ion implantation operation is greater than 45 degrees, and the azimuth of the direction of the first ion implantation operation differs from the azimuth of the direction of the second ion implantation operation by between 150 and 210 degrees. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification