SUPERSTRATE AND METHODS OF USING THE SAME

• US 20200133119A1
• Filed: 10/26/2018
• Published: 04/30/2020
• Est. Priority Date: 10/26/2018
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Shackleton, Steven C.
• Granted Patent: US 11,204,549 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00

Abstract

An apparatus may include a superstrate. The superstrate may have a body with a first side, a second side opposite the first side, and a first diameter. The superstrate may also include a mesa on the first side of the body. The mesa may have a second diameter. The center point of the body can be different from the center point of the mesa.

Claims

1. A superstrate comprising:

a body having a first diameter, a first side, and a second side opposite the first side; and

a mesa on the first side of the body, wherein the mesa has a second diameter, wherein a center point of the first diameter of the body is different from a center point of the second diameter of the mesa.

2. The superstrate of claim 1, wherein the second diameter is smaller than the first diameter.

3. The superstrate of claim 1, wherein the body further comprises an edge region and wherein the mesa further comprises an edge region.

4. The superstrate of claim 3, wherein a first portion of the edge region of the mesa is aligned with a first portion of the edge region of the body.

5. The superstrate of claim 1, further comprising an exclusion region, wherein the exclusion region is an area between an outer edge of the mesa and an outer edge of the body.

6. The superstrate of claim 5, wherein the exclusion region circumferentially surrounds the perimeter region of the mesa.

7. The superstrate of claim 5, wherein the exclusion region is noncontiguous.

8. The superstrate of claim 5, further comprising at least one alignment marker within the exclusion region.

9. The superstrate of claim 5, wherein the exclusion region comprises a first zone and a second zone opposite the first zone, wherein the first zone has a distance y between the outer edge of the mesa and the outer edge of the body defined by the formula 0≤

Y≤

2X, wherein X is equal to a radius of the superstrate body minus a radius of the mesa, and wherein the second zone of the exclusion region has a distance Z between the outer edge of the mesa and the outer edge of the body of a value which is defined by 2X−

Y.

10. The superstrate of claim 9, wherein Y≠

Z.

11. A planarization apparatus comprising:

a superstrate comprising;

a body having a first diameter, a first side, and a second side opposite the first side; and

a mesa on the first side of the body, wherein the mesa has a second diameter, wherein a center point of the first diameter of the body is different from a center point of the second diameter of the mesa; and

a superstrate holder configured to hold the superstrate.

12. The apparatus of claim 11, wherein the superstrate further comprises an exclusion region, wherein the exclusion region is between an outer edge of the body and an outer edge of the mesa.

13. The apparatus of claim 11, wherein the exclusion region comprises a first zone and a second zone opposite the first zone.

14. The apparatus of claim 13, wherein the first zone has a distance Y between the outer edge of the mesa and the outer edge of the body defined by the formula 0≤

Y≤

2X, wherein X is equal to a radius of the superstrate body minus a radius of the mesa, and wherein the second zone of the exclusion region has a distance Z between the outer edge of the mesa and the outer edge of the body of a value which is defined by 2X−

Y.

15. The apparatus of claim 11, wherein the second diameter is smaller than the first diameter.

16. A method of forming a planarization layer, comprising:

depositing a formable material on a substrate, the substrate comprising a center point;

aligning a superstrate with the substrate, the superstrate comprising;

a body having a first diameter, a first side, and a second side opposite the first side; and

a mesa on the first side of the body, wherein the mesa has a second diameter, and wherein a center point of the first diameter of the body is different from a center point of the second diameter of the mesa; and

an exclusion region, wherein the exclusion region is an area between an outer edge of the mesa and an outer edge of the body; and

contacting the mesa with the substrate.

17. The method of claim 16, further comprising separating the mesa and the substrate.

18. The method of claim 17, wherein separating the mesa and the substrate is by applying a force on the exclusion region.

19. The method of claim 16, wherein the superstrate further comprises at least one alignment marker to help align the superstrate with the substrate.

20. The method of claim 19, wherein the alignment marker is in the exclusion region.