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Extreme Ultraviolet Photoresist and Method

  • US 20200133124A1
  • Filed: 12/23/2019
  • Published: 04/30/2020
  • Est. Priority Date: 05/30/2017
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a photoresist layer over a substrate, wherein the photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG);

    exposing a portion of the photoresist layer to a radiation;

    performing a baking process after the exposing of the portion of the photoresist layer, wherein the TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base; and

    removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.

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