COATING COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY PROCESS

• US 20200133126A1
• Filed: 10/31/2018
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Application

• Current Assignee: Rohm and Haas Electronic Materials Korea, Ltd.
• Original Assignee: Rohm and Haas Electronic Materials Korea, Ltd.
• Inventors: Sim, Jae Hwan, Kim, Suwoong, Park, Jin Hong, Kim, Myung Yeol, Ghang, Yoo-Jin, Lim, Jae-Bong
• Application Number:
  US16/176,245
• Publication Number:
  US 20200133126A1
• Time in Patent Office: Days
• CPC Class Codes: C07D 251/32 Cyanuric acid; Isocyanuric acid
• CPC Class Codes: C08G 63/6854 derived from polycarboxylic acids and polyhydroxy compounds
• CPC Class Codes: C08G 71/00 Macromolecular compounds obtained by reactions forming a ureide or urethane link, otherwise, than from isocyanate radicals in the main chain of the macromolecule
• CPC Class Codes: G03F 7/0045 with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: G03F 7/2004 characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
• CPC Class Codes: G03F 7/2037 Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
• CPC Class Codes: G03F 7/30 Imagewise removal using liquid means
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence

Abstract

A monomer represented by Chemical Formula (1):

wherein, X, Y, and Z are the same as described in the specification, and the polymer including repeat units derived from the monomer.

Claims

1. A monomer represented by Chemical Formula (1):

2. A polymer comprising repeat units derived from the monomer of claim 1.

3. The polymer of claim 2, further comprising repeat units derived from a monomer represented by Chemical Formula (2):

4. The polymer of claim 2, further comprising repeat units derived from a monomer represented by Chemical Formula (3):

5. The polymer of claim 2, wherein in Chemical Formula (1), at least one selected from X, Y, and Z comprises a carboxylic acid group.

6. The polymer of claim 2, wherein in Chemical Formula (2), at least one selected from A, B, C, D, E, and F comprises an iodine.

7. The polymer of claim 2, wherein in Chemical Formula (3), at least one selected from K, L, and M comprises a hydroxyalkyl group.

8. An underlayer coating composition comprising:

a polymer of claim 2;

a crosslinking agent; and

a solvent.

9. The underlayer coating composition of claim 8, further comprising a photoacid generator.

10. A coated substrate comprising:

a layer of the underlayer coating composition of claim 8 disposed on a substrate, and

a photoresist layer disposed on the layer of the underlayer coating composition.

11. A method of forming an electronic device, comprising:

(a) applying a layer of the underlayer coating composition of claim 8 on a substrate;

(b) curing the underlayer coating composition to form an underlayer film;

(c) applying a layer of a photoresist composition on the underlayer film to form a photoresist layer;

(d) pattern-wise exposing the photoresist layer to radiation; and

(e) developing the exposed photoresist layer to provide a resist relief image.