METHOD FOR REMOVING PHOTORESISTOR LAYER, METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A PACKAGE

• US 20200133132A1
• Filed: 04/10/2019
• Published: 04/30/2020
• Est. Priority Date: 10/30/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Ouyang, Christine Y
• Granted Patent: US 11,307,500 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 7/0043 Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof G03F7/0044 takes precedence
• CPC Class Codes: G03F 7/027 Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds G03F7/075 takes precedence
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: G03F 7/426 containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: G03F 7/70033 by plasma extreme ultraviolet [EUV] sources
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/02373 Layout of the redistribution layers
• CPC Class Codes: H01L 2224/02381 Side view
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 : Layer and HDI connectors
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/92244 : the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/1035 : the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
• CPC Class Codes: H01L 2225/1058 : Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/5283 : Cross-sectional geometry
• CPC Class Codes: H01L 24/09 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms

Abstract

A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

Claims

1. A method for removing a resist layer, comprising:

forming a resist layer with a material comprising a metal oxide core with organic ligands; and

globally applying a chlorine-containing compound or a methyl group-containing compound onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

2. The method of claim 1, wherein the metal oxide core comprises hafnium oxide, titanium oxide, tin oxide, or zirconium oxide.

3. The method of claim 1, wherein the organic ligands comprise a benzoic acid or a sulfonic acid.

4. The method of claim 3, wherein the organic ligands further comprise a methacrylic acid.

5. The method of claim 1, wherein the chlorine-containing compound comprises tetrachlorosilane or dimethylacetamide, and the methyl group-containing compound comprises trimethylaluminum.

6. The method of claim 1, wherein performing the ligand exchange process comprises replacing the organic ligands with chloro groups provided by the chlorine-containing compound or methyl-groups provided by the methyl group-containing compound to turn resultants thereof into volatiles.

7. The method of claim 1, wherein prior to globally applying the chlorine-containing compound or the methyl group-containing compound onto the resist layer, the method further comprises:

performing a fluorination process to react the metal oxide core with a fluorine-containing compound to form a metal fluoride core.

8. The method of claim 7, wherein the fluorine-containing compound comprises a hydrofluoric acid.

9. The method of claim 7, wherein prior to performing the fluorination process, the method further comprises:

performing a ligand removal process to remove the organic ligands.

10. The method of claim 9, wherein performing the ligand removal process comprises performing an ozone plasma process, an oxygen plasma process, or a remote oxygen plasma process.

11. A method of forming a pattern, comprising:

forming a resist layer over a base layer;

patterning the resist layer to form a patterned resist layer with openings exposing portions of the base layer, a material of the patterned resist layer comprising a metal oxide core with organic ligands;

patterning the base layer by using the patterned resist layer as a mask to form a pattern; and

removing the patterned resist layer, wherein removing the patterned resist layer comprises;

globally applying a chlorine-containing compound or a methyl group-containing compound onto the patterned resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the patterned resist layer so as to remove the patterned resist layer through sublimation.

12. The method of claim 11, wherein the base layer comprises a conductive layer, a semiconductor layer, or an insulating layer.

13. The method of claim 11, wherein patterning the resist layer comprises:

providing a photomask over the resist layer;

globally irradiating the resist layer with an electromagnetic radiation through the photomask to allow part of the resist layer to be exposed portions to the electromagnetic radiation and rest of the resist layer to be unexposed portions to the electromagnetic radiation, wherein the electromagnetic radiation comprises an extreme ultraviolet exposure; and

removing either the exposed portions or the unexposed portions of the resist layer through a developer to form the patterned resist layer with the openings exposing the portions of the base layer.

14. The method of claim 11, wherein performing the ligand exchange process comprises replacing the organic ligands with chloro groups provided by the chlorine-containing compound or methyl-groups provided by the methyl group-containing compound to turn resultants thereof into volatiles.

15. The method of claim 11, wherein prior to globally applying the chlorine-containing compound or the methyl group-containing compound onto the patterned resist layer, removing the patterned resist layer further comprises performing a fluorination process to react the metal oxide core with a fluorine-containing compound to form a metal fluoride core,

wherein the fluorine-containing compound comprises hydrofluoric acid.

16. The method of claim 15, wherein prior to globally applying the chlorine-containing compound or the methyl group-containing compound onto the patterned resist layer, removing the patterned resist layer further comprises performing a ligand removal process to remove the organic ligands,

wherein performing the ligand removal process comprises performing an ozone plasma process, an oxygen plasma process, or a remote oxygen plasma process.

17. A method of manufacturing a package, comprising:

providing a semiconductor die, wherein the semiconductor die comprises a plurality of metallic posts;

encapsulating the semiconductor die by an insulating encapsulant; and

forming a redistribution circuit structure over the semiconductor die and the insulating encapsulant, comprising;

forming a resist layer with a pattern having openings over the insulating encapsulant, a material of the resist layer comprising a metal oxide core with organic ligands;

forming a metallization layer corresponding to the resist layer over the insulating encapsulant and electrically connected to the plurality of metallic posts; and

globally applying a chlorine-containing compound or a methyl group-containing compound onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand exchange process with the resist layer so as to remove the resist layer through sublimation.

18. The method of claim 17, wherein performing the ligand exchange process comprises replacing the organic ligands with chloro groups provided by the chlorine-containing compound or methyl-groups provided by the methyl group-containing compound to turn resultants thereof into volatiles.

19. The method of claim 17, wherein prior to globally applying the chlorine-containing compound or the methyl group-containing compound onto the resist layer, the method further comprises performing a fluorination process to react the metal oxide core with a fluorine-containing compound to form a metal fluoride core,

wherein the fluorine-containing compound comprises hydrofluoric acid.

20. The method of claim 19, wherein prior to globally applying the chlorine-containing compound or the methyl group-containing compound onto the resist layer, the method further comprises performing a ligand removal process to remove the organic ligands,

wherein performing the ligand removal process comprises performing an ozone plasma process, an oxygen plasma process, or a remote oxygen plasma process.