PROXIMITY EFFECT CORRECTION IN ELECTRON BEAM LITHOGRAPHY

• US 20200133139A1
• Filed: 10/25/2019
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: LO, Wen, CHANG, Shih-Ming
• Granted Patent: US 11,556,058 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
• CPC Class Codes: H01J 2237/31769 Proximity effect correction
• CPC Class Codes: H01J 2237/31771 using multiple exposure
• CPC Class Codes: H01J 37/304 Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

A method of generating a layout pattern includes determining a first energy density indirectly exposed to a first feature of one or more features of a layout pattern on an energy-sensitive material when the one or more features of the layout pattern on the energy-sensitive material are directly exposed by a charged particle beam. The method also includes adjusting a second energy density exposed the first feature when the first feature is directly exposed by the charged particle beam. A total energy density of the first feature that comprises a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure is maintained at about a threshold energy level to fully expose the first feature in the energy-sensitive material.

Claims

1. A method of generating a layout pattern, comprising:

determining a first energy density indirectly exposed to a first feature of one or more features of a layout pattern on an energy-sensitive material when the one or more features of the layout pattern in the energy-sensitive material are directly exposed by a charged particle beam; and

adjusting a second energy density exposed to the first feature when the first feature is directly exposed by the charged particle beam, so that a total energy density received by the first feature is a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure, and the total energy density is maintained at about a threshold energy level to fully expose the first feature in the energy-sensitive material.

2. The method of claim 1, further comprising:

prior to the determining the first energy density, obtaining the layout pattern having the one or more features to be generated in the energy-sensitive material on a work piece.

3. The method of claim 1, wherein the first feature comprises a width, a length, and an inside region surrounded by an edge region, the method further comprising:

directly exposing the inside region of the first feature of the layout pattern by the charged particle beam to the second energy density; and

directly exposing the edge region of the first feature of the layout pattern by the charged particle beam to an electron density greater than the second energy density.

4. The method of claim 3, wherein a width of the edge region is between 0.5 nm to 50 nm, the method further comprising:

obtaining information of the energy-sensitive material before the adjusting the second energy density;

maintaining the total energy density of the inside region of the first feature at the threshold energy level to fully expose the energy-sensitive material based on the information of the energy-sensitive material, wherein the threshold energy level is a lowest energy density that fully exposes the energy-sensitive material of the inside region of the first feature; and

directly exposing the edge region of the first feature with the electron density that is between 1 percent to 1000 percent greater than the second energy density.

5. The method of claim 4, wherein the one or more features of the layout pattern comprises at least two features, the method further comprising:

maintaining a critical dimension (CD) uniformity between the at least two features of the layout pattern by maintaining the total energy density in the inside region of the at least two features of the layout pattern at a same energy level;

or

reducing a change in the CD of the at least two features of the layout pattern by maintaining the total energy density of the at least two features at about the threshold energy level.

6. The method of claim 1, wherein the determining the first energy density further comprises:

receiving the first energy density from a scattering of the direct exposure of the charged particle beam in the one or more features.

7. The method of claim 4, wherein the energy-sensitive material is a negative tone energy-sensitive material, further comprising:

exposing the two or more features of the layout pattern in the energy-sensitive material to the threshold energy level to fully expose the negative tone energy-sensitive material; and

applying a developer to dissolve and remove un-exposed regions of the energy-sensitive material.

8. The method of claim 4, wherein the energy-sensitive material is a positive tone energy-sensitive material, further comprising:

exposing the two or more features of the layout pattern in the energy-sensitive material to the threshold energy level to fully expose the positive tone energy-sensitive material; and

applying a developer to dissolve and remove the two or more features of the layout pattern.

9. The method of claim 1, further comprising:

determining one or more timings for turning on and off the charged particle beam; and

determining one or more deflection angles for the charged particle beam to expose the first feature to the second energy density.

10. The method of claim 4, further comprising:

adjusting the first energy density by adjusting an energy directly delivered by the charged particle beam to the one or more features;

adjusting the second energy density by adjusting an energy directly delivered by the charged particle beam to the first feature; and

maintaining a sum of the first energy density and the second energy density delivered to the first feature at about the threshold energy level.

11. The method of claim 10, further comprising:

adjusting the first energy density indirectly delivered by the charged particle beam to the one or more features of the layout pattern;

adjusting the second energy density directly delivered by the charged particle beam to the one or more features of the layout pattern; and

maintaining, for each feature, a sum of the first energy density indirectly delivered and the second energy density directly delivered at about the threshold energy level.

12. The method of claim 10, further comprising:

adjusting the energy directly delivered by the charged particle beam to the one or more features by;

adjusting a charged particle beam intensity; and

adjusting a charged particle beam exposure time.

13. A method of generating a layout pattern, comprising:

obtaining a layout pattern comprising one or more features to be generated on an energy-sensitive material on a work piece;

obtaining information of the energy-sensitive material;

determining a first energy density indirectly exposed to a first feature of the one or more features of the layout pattern in the energy-sensitive material when the one or more features of the layout pattern in the energy-sensitive material are directly exposed by a charged particle beam;

determining a second energy density of the first feature when the first feature is directly exposed by the charged particle beam;

maintaining a total energy density of the first feature that is a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure at about a threshold energy level that is, based on the information of the energy-sensitive material at a lowest energy density that fully exposes the energy-sensitive material; and

directly exposing the first feature of the layout pattern by the charged particle beam to the second energy density.

14. The method of claim 13, further comprising:

adjusting the first energy density by adjusting an energy directly delivered by the charged particle beam to the one or more features;

adjusting the second energy density by adjusting an energy directly delivered by the charged particle beam to the first feature; and

maintaining the sum of the first energy density and the second energy density delivered to the first feature at about the threshold energy level.

15. The method of claim 13, further comprising:

adjusting the first energy density indirectly delivered by the charged particle beam to the one or more features of the layout pattern;

adjusting the second energy density directly delivered by the charged particle beam to the one or more features of the layout pattern; and

maintaining, for each feature, a sum of the first energy density indirectly delivered and the second energy density directly delivered at about the threshold energy level.

16. A control system for generating a layout pattern on an energy-sensitive material, comprising:

a main controller; and

an analyzer module coupled to the main controller, wherein the analyzer module is configured to receive a layout pattern comprising one or more features and information of the energy-sensitive material, wherein the layout pattern is produced by a charged particle beam in the energy-sensitive material on a work piece, and wherein the analyzer module is configured to;

determine a first energy density indirectly exposed to a first feature of the one or more features of the layout pattern in the energy-sensitive material when the one or more features of the layout pattern in the energy-sensitive material are directly exposed by the charged particle beam;

adjust a second energy density of the first feature when the first feature is directly exposed by the charged particle beam, wherein a total energy density of the first feature that is a sum of the first energy density from the indirect exposure and the second energy density from the direct exposure, and the total energy density is maintained at about a threshold energy level that is a lowest energy density that fully exposes the energy-sensitive material; and

generate a set of commands that comprises one or more timings and one or more deflection angles for the main controller to control the charged particle beam to directly expose the first feature of the layout pattern to the second energy density.

17. The control system of claim 16, further comprising:

a charged particle beam shutter controller coupled to the main controller and configured to turn one or more charged particle beam on or off by the set of commands received from the main controller;

a charged particle beam deflector controller coupled to the main controller and configured to deflect a direction of the one or more charged particle beams by the set of commands received from the main controller; and

wherein by turning on and off the one or more charged particle beams and by deflecting the direction of the one or more charged particle beams the layout pattern is generated in the energy-sensitive material.

18. The control system of claim 17, further comprising:

a stage controller coupled to the main controller and configured to move a stage of the work piece, wherein by turning on and off the one or more charged particle beams and by deflecting the direction of the one or more charged particle beams and/or by moving the stage the layout pattern is generated in the energy-sensitive material.

19. The control system of claim 17, further comprising:

a charged particle beam source controller coupled to the main controller and configured to set an intensity of the one or more charged particle beams , wherein the intensity of a charged particle beam is an amount of energy delivered by the charged particle beam to the energy-sensitive material to produce an energy density on the energy-sensitive material.

20. The control system of claim 16, wherein the control system is configured to maintain a critical dimension (CD) of the one or more features of the layout pattern to a specific width, the specific width is in a range of about 0.1 nm to about 1000 nm.