DATA STORING METHOD, MEMORY CONTROLLING CIRCUIT UNIT AND MEMORY STORAGE DEVICE

• US 20200133835A1
• Filed: 12/05/2018
• Published: 04/30/2020
• Est. Priority Date: 10/25/2018
• Status: Active Grant

• Current Assignee: Phison Electronics Corporation
• Original Assignee: Phison Electronics Corporation
• Inventors: Yeh, Chih-Kang
• Granted Patent: US 10,997,067 B2
• Time in Patent Office: Days
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/401 Compressed data
• CPC Class Codes: G06F 2212/403 Error protection encoding, e.g. using parity or ECC codes
• CPC Class Codes: G06F 2212/7211 Wear leveling
• CPC Class Codes: G06F 3/0616 in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
• CPC Class Codes: G06F 3/0649 Lifecycle management
• CPC Class Codes: G06F 3/0679 Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5635 Erasing circuits
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/349 Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
• CPC Class Codes: G11C 29/52 Protection of memory contents; Detection of errors in memory contents
• CPC Class Codes: G11C 7/1006 Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Abstract

A data storing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: receiving a first data; determining whether a wear degree value of a rewritable non-volatile memory module is less than a threshold; if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode. A reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.

Claims

1. A data storing method for a rewritable non-volatile memory module, the data storing method comprising:

receiving a first data;

determining whether a wear degree value of the rewritable non-volatile memory module is less than a threshold;

if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and

if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode,

wherein a reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.

2. The data storing method of claim 1, wherein the rewritable non-volatile memory module comprises a minimum wear degree value and a maximum wear degree value, the minimum wear degree value differs from the maximum wear degree value by a first value, the threshold differs from the minimum wear degree value by a second value, and the second value is one tenth of the first value.

3. The data storing method of claim 1, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, each physical erasing unit among the plurality of physical erasing units comprises a plurality of physical programming units, wherein the step of storing the first data into the rewritable non-volatile memory module by using the first mode comprises:

writing the first data to a first physical erasing unit of the plurality of physical erasing units by using a first programming mode; and

writing the first data stored in the first physical erasing unit to a second physical erasing unit of the plurality of physical erasing units by using a second programming mode.

4. The data storing method of claim 3, further comprising:

determining whether the first data in the second physical erasing unit has an error bit that cannot be corrected; and

if the first data stored in the second physical erasing unit has the error bit that cannot be corrected, reading the first data stored in the first physical erasing unit.

5. The data storing method of claim 4, wherein the step of storing the first data into the rewritable non-volatile memory module by using the second mode comprises:

writing the first data to a third physical erasing unit of the plurality of physical erasing units by using the second programming mode;

determining whether the first data in the third physical erasing unit has the error bit that cannot be corrected; and

if the first data in the third physical erasing unit has the error bit that cannot be corrected, not reading the first data written by using the first programming mode.

6. The data storing method of claim 1, wherein the step of storing the first data into the rewritable non-volatile memory module by using the first mode comprises:

performing a first encoding operation to generate a first encoded data corresponding to the first data, and storing the first data and the first encoded data into the rewritable non-volatile memory module,

wherein the step of storing the first data into the rewritable non-volatile memory module by using the second mode comprises;

performing a second encoding operation to generate a second encoded data corresponding to the first data, and storing the first data and the second encoded data to the rewritable non-volatile memory module,

wherein the first encoded data and the second encoded data are respectively used to correct error bits of the first data stored in the rewritable non-volatile memory module, and a first quantity of the error bits that can be corrected by the first encoded data is higher than a second quantity of the error bits that can be corrected by the second encoded data.

7. The data storing method of claim 1, wherein the step of storing the first data into the rewritable non-volatile memory module by using the first mode comprises:

performing a first compression operation to generate a first compressed data corresponding to the first data, and storing the first compressed data into the rewritable non-volatile memory module,

wherein the step of storing the first data into the rewritable non-volatile memory module by using the second mode comprises;

performing a second compression operation to generate a second compressed data corresponding to the first data, and storing the second compressed data into the rewritable non-volatile memory module,

wherein a size of the first compressed data is smaller than a size of the second compressed data.

8. A memory controlling circuit unit for a rewritable non-volatile memory module, the memory controlling circuit unit comprising:

a host interface, configured to couple to a host system;

a memory interface, configured to couple to the rewritable non-volatile memory module; and

a memory management circuit, coupled to the host interface and the memory interface,

wherein the memory management circuit is configured to receive a first data,

wherein the memory management circuit is further configured to determine whether a wear degree value of the rewritable non-volatile memory module is less than a threshold,

when the wear degree value of the rewritable non-volatile memory module is less than the threshold, the memory management circuit is further configured to store the first data into the rewritable non-volatile memory module by using a first mode, and

when the wear degree value of the rewritable non-volatile memory module is not less than the threshold, the memory management circuit is further configured to store the first data into the rewritable non-volatile memory module by using a second mode,

wherein a reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.

9. The memory controlling circuit unit of claim 8, wherein the rewritable non-volatile memory module comprises a minimum wear degree value and a maximum wear degree value, the minimum wear degree value differs from the maximum wear degree value by a first value, the threshold differs from the minimum wear degree value by a second value, and the second value is one tenth of the first value.

10. The memory controlling circuit unit of claim 8, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, each physical erasing unit among the plurality of physical erasing units comprises a plurality of physical programming units, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the first mode,

the memory management circuit is further configured to write the first data to a first physical erasing unit of the plurality of physical erasing units by using a first programming mode, and

the memory management circuit is further configured to write the first data stored in the first physical erasing unit to a second physical erasing unit of the plurality of physical erasing units by using a second programming mode.

11. The memory controlling circuit unit of claim 10, wherein

the memory management circuit is further configured to determine whether the first data in the second physical erasing unit has an error bit that cannot be corrected, and

if the first data stored in the second physical erasing unit has the error bit that cannot be corrected, the memory management circuit is further configured to read the first data stored in the first physical erasing unit.

12. The memory controlling circuit unit of claim 11, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the second mode,

the memory management circuit is further configured to write the first data to a third physical erasing unit of the plurality of physical erasing units by using the second programming mode,

the memory management circuit is further configured to determine whether the first data in the third physical erasing unit has the error bit that cannot be corrected, and

if the first data in the third physical erasing unit has the error bit that cannot be corrected, the memory management circuit does not read the first data written by using the first programming mode.

13. The memory controlling circuit unit of claim 8, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the first mode,

the memory management circuit is further configured to perform a first encoding operation to generate a first encoded data corresponding to the first data, and store the first data and the first encoded data into the rewritable non-volatile memory module,

wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the second mode,

the memory management circuit is further configured to perform a second encoding operation to generate a second encoded data corresponding to the first data, and store the first data and the second encoded data to the rewritable non-volatile memory module,

wherein the first encoded data and the second encoded data are respectively used to correct error bits of the first data stored in the rewritable non-volatile memory module, and a first quantity of the error bits that can be corrected by the first encoded data is higher than a second quantity of the error bits that can be corrected by the second encoded data.

14. The memory controlling circuit unit of claim 8, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the first mode,

the memory management circuit is further configured to perform a first compression operation to generate a first compressed data corresponding to the first data, and store the first compressed data into the rewritable non-volatile memory module,

wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the second mode,

the memory management circuit is further configured to perform a second compression operation to generate a second compressed data corresponding to the first data, and store the second compressed data into the rewritable non-volatile memory module,

wherein a size of the first compressed data is smaller than a size of the second compressed data.

15. A memory storage device, comprising:

a connection interface unit, configured to couple to a host system;

a rewritable non-volatile memory module; and

a memory controlling circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,

wherein the memory controlling circuit unit is configured to receive a first data,

wherein the memory controlling circuit unit is further configured to determine whether a wear degree value of the rewritable non-volatile memory module is less than a threshold,

if the wear degree value of the rewritable non-volatile memory module is less than the threshold, the memory controlling circuit unit is further configured to store the first data into the rewritable non-volatile memory module by using a first mode, and

if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, the memory controlling circuit unit is further configured to store the first data into the rewritable non-volatile memory module by using a second mode,

wherein a reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.

16. The memory storage device of claim 15, wherein the rewritable non-volatile memory module comprises a minimum wear degree value and a maximum wear degree value, the minimum wear degree value differs from the maximum wear degree value by a first value, the threshold differs from the minimum wear degree value by a second value, and the second value is one tenth of the first value.

17. The memory storage device of claim 15, wherein the rewritable non-volatile memory module comprises a plurality of physical erasing units, each physical erasing unit among the plurality of physical erasing units comprises a plurality of physical programming units, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the first mode,

the memory controlling circuit unit is further configured to write the first data to a first physical erasing unit of the plurality of physical erasing units by using a first programming mode, and

the memory controlling circuit unit is further configured to write the first data stored in the first physical erasing unit to a second physical erasing unit of the plurality of physical erasing units by using a second programming mode.

18. The memory storage device of claim 17, wherein

the memory controlling circuit unit is further configured to determine whether the first data in the second physical erasing unit has an error bit that cannot be corrected, and

if the first data stored in the second physical erasing unit has the error bit that cannot be corrected, the memory controlling circuit unit is further configured to read the first data stored in the first physical erasing unit.

19. The memory storage device of claim 18, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the second mode,

the memory controlling circuit unit is further configured to write the first data to a third physical erasing unit of the plurality of physical erasing units by using the second programming mode,

the memory controlling circuit unit is further configured to determine whether the first data in the third physical erasing unit has the error bit that cannot be corrected, and

if the first data in the third physical erasing unit has the error bit that cannot be corrected, the memory controlling circuit unit does not read the first data written by using the first programming mode.

20. The memory storage device of claim 15, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the first mode,

the memory controlling circuit unit is further configured to perform a first encoding operation to generate a first encoded data corresponding to the first data, and store the first data and the first encoded data into the rewritable non-volatile memory module,

wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the second mode,

the memory controlling circuit unit is further configured to perform a second encoding operation to generate a second encoded data corresponding to the first data, and store the first data and the second encoded data to the rewritable non-volatile memory module,

wherein the first encoded data and the second encoded data are respectively used to correct error bits of the first data stored in the rewritable non-volatile memory module, and a first quantity of the error bits that can be corrected by the first encoded data is higher than a second quantity of the error bits that can be corrected by the second encoded data.

21. The memory storage device of claim 15, wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the first mode,

the memory controlling circuit unit is further configured to perform a first compression operation to generate a first compressed data corresponding to the first data, and store the first compressed data into the rewritable non-volatile memory module,

wherein in the operation of storing the first data into the rewritable non-volatile memory module by using the second mode,

the memory controlling circuit unit is further configured to perform a second compression operation to generate a second compressed data corresponding to the first data, and store the second compressed data into the rewritable non-volatile memory module,

wherein a size of the first compressed data is smaller than a size of the second compressed data.