DATA STORING METHOD, MEMORY CONTROLLING CIRCUIT UNIT AND MEMORY STORAGE DEVICE
First Claim
1. A data storing method for a rewritable non-volatile memory module, the data storing method comprising:
- receiving a first data;
determining whether a wear degree value of the rewritable non-volatile memory module is less than a threshold;
if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and
if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode,wherein a reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.
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Accused Products
Abstract
A data storing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: receiving a first data; determining whether a wear degree value of a rewritable non-volatile memory module is less than a threshold; if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode. A reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode.
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Citations
21 Claims
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1. A data storing method for a rewritable non-volatile memory module, the data storing method comprising:
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receiving a first data; determining whether a wear degree value of the rewritable non-volatile memory module is less than a threshold; if the wear degree value of the rewritable non-volatile memory module is less than the threshold, storing the first data into the rewritable non-volatile memory module by using a first mode; and if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, storing the first data into the rewritable non-volatile memory module by using a second mode, wherein a reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A memory controlling circuit unit for a rewritable non-volatile memory module, the memory controlling circuit unit comprising:
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a host interface, configured to couple to a host system; a memory interface, configured to couple to the rewritable non-volatile memory module; and a memory management circuit, coupled to the host interface and the memory interface, wherein the memory management circuit is configured to receive a first data, wherein the memory management circuit is further configured to determine whether a wear degree value of the rewritable non-volatile memory module is less than a threshold, when the wear degree value of the rewritable non-volatile memory module is less than the threshold, the memory management circuit is further configured to store the first data into the rewritable non-volatile memory module by using a first mode, and when the wear degree value of the rewritable non-volatile memory module is not less than the threshold, the memory management circuit is further configured to store the first data into the rewritable non-volatile memory module by using a second mode, wherein a reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A memory storage device, comprising:
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a connection interface unit, configured to couple to a host system; a rewritable non-volatile memory module; and a memory controlling circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module, wherein the memory controlling circuit unit is configured to receive a first data, wherein the memory controlling circuit unit is further configured to determine whether a wear degree value of the rewritable non-volatile memory module is less than a threshold, if the wear degree value of the rewritable non-volatile memory module is less than the threshold, the memory controlling circuit unit is further configured to store the first data into the rewritable non-volatile memory module by using a first mode, and if the wear degree value of the rewritable non-volatile memory module is not less than the threshold, the memory controlling circuit unit is further configured to store the first data into the rewritable non-volatile memory module by using a second mode, wherein a reliability of the first data stored by using the first mode is higher than a reliability of the first data stored by using the second mode. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification