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MEMORY STRUCTURE WITH NON-STRAIGHT WORD LINE

  • US 20200135241A1
  • Filed: 10/28/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/28/2018
  • Status: Active Grant
First Claim
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1. A memory structure, comprising:

  • a first memory cell comprising;

    a first cell region;

    a second cell region;

    a digit region disposed between the cell regions;

    a first capacitor disposed at the first cell region;

    a second capacitor disposed at the second cell region; and

    a bit line contact disposed at the digit region of the first memory cell;

    a first word line disposed on the first cell region of the first memory cell, wherein the first word line comprises a first portion, a second portion and a third portion, the first portion extends from an end of the second portion along a first direction and the third portion extends from an another end of the second portion along a second direction, and an angle between the first direction and the second direction is less than 180°

    , wherein the second portion is disposed between the first capacitor and the bit line contact; and

    a second word line disposed on the second region of the first memory cell, wherein the second word line comprises a forth portion, a fifth portion and a sixth portion, the forth portion extends from an end of the fifth portion along a third direction and the sixth portion extends from an another end of the fifth portion along a forth direction, and an angle between the third direction and the forth direction is less than 180°

    , wherein the fifth portion is disposed between the second capacitor and the bit line contact,wherein a distance between the second portion and the fifth portion is less than a distance between the first portion and the forth portion and a distance between the third portion and the sixth portion.

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