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READ CIRCUIT FOR MAGNETIC TUNNEL JUNCTION (MTJ) MEMORY

  • US 20200135252A1
  • Filed: 07/03/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/29/2018
  • Status: Active Grant
First Claim
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1. A memory device, comprising:

  • a magnetic tunnel junction (MTJ) current path, the MTJ current path comprising;

    a first current mirror transistor;

    a first pull-up read-enable transistor connected in series with the first current mirror transistor;

    an MTJ memory cell connected in series with the first pull-up read-enable transistor and including an MTJ memory element and a first access transistor;

    a first pull-down read-enable transistor connected in series with the MTJ memory cell; and

    a first non-linear resistance device connected in series and between the first pull-up read-enable transistor and the first current mirror transistor, wherein the first non-linear resistance device is configured to provide a first resistance when applied a first voltage and a second resistance greater than the first resistance when applied a second voltage smaller than the first voltage

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