THIN FILM CAPACITOR, MANUFACTURING METHOD THEREFOR, AND SUBSTRATE WITH BUILT-IN ELECTRONIC COMPONENT
First Claim
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1. A thin film capacitor comprising:
- a lower electrode made of a metal foil containing many metal grains;
a dielectric thin film formed on an upper surface of the lower electrode; and
an upper electrode formed on an upper surface of the dielectric thin film, whereina lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear, anda height difference between the cross sections of adjacent metal grains in the etched surface is 1 μ
m or more and 8 μ
m or less.
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Abstract
A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 μm or more and 8 μm or less.
5 Citations
13 Claims
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1. A thin film capacitor comprising:
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a lower electrode made of a metal foil containing many metal grains; a dielectric thin film formed on an upper surface of the lower electrode; and an upper electrode formed on an upper surface of the dielectric thin film, wherein a lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear, and a height difference between the cross sections of adjacent metal grains in the etched surface is 1 μ
m or more and 8 μ
m or less. - View Dependent Claims (2, 3, 4, 5)
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6. A thin film capacitor manufacturing method comprising steps of:
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forming a dielectric thin film on an upper surface of a lower electrode; forming an upper electrode on an upper surface of the dielectric thin film; and thinning the lower electrode, wherein the step of thinning the lower electrode includes a step of etching a lower surface of the lower electrode using an etching solution mainly containing Na2SO8.H2SO4. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A substrate with built-in electronic component comprising:
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a multilayer substrate; a thin film capacitor embedded in an inside of the multilayer substrate and including a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on the upper surface of the lower electrode, and an upper electrode formed on the upper surface of the dielectric thin film; a first via hole electrode formed in the multilayer substrate so as to be electrically connected to the lower electrode of the thin film capacitor; and a second via hole electrode formed in the multilayer substrate so as to be electrically connected to the upper electrode of the thin film capacitor, wherein the lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear, the height difference between the cross sections of adjacent metal grains is 1 μ
m or more and 8 μ
m or less. - View Dependent Claims (13)
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Specification