BACK-END-OF-THE LINE CAPACITOR
First Claim
1. A method of forming a back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor, the method comprising:
- forming an electrically conductive interconnect structure in a first interconnect dielectric material layer;
forming a patterned capacitor material stack above the electrically conductive interconnect structure and the first interconnect dielectric material layer, wherein the patterned capacitor material stack comprises a first capacitor dielectric material, a first metal-containing material, a second capacitor dielectric material and a second metal-containing material, and wherein the second metal-containing material and the second capacitor dielectric material are located atop and overlap the first metal-containing material and the first capacitor dielectric material;
forming a second interconnect dielectric material layer laterally surrounding, and located above the patterned capacitor material stack; and
forming a first contact structure in the second interconnect dielectric material layer and contacting a surface of the first interconnect dielectric material layer, and a second contact structure in the second interconnect dielectric material layer and contacting a surface of the electrically conductive interconnect structure, wherein the first contact structure passes through first metal-containing material and the first capacitor dielectric material, and the second contact structure passes through second metal-containing material and the second capacitor dielectric material.
1 Assignment
0 Petitions
Accused Products
Abstract
A back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor is provided that includes three electrode plates in which the first electrode plate of the MIM capacitor is an electrically conductive interconnect structure embedded in a first interconnect dielectric material layer. The other two electrode plates are located in a second interconnect dielectric material layer that is located above the first interconnect dielectric material layer. A first contact structure is present in the second interconnect dielectric material layer and contacts a surface of the first interconnect dielectric material layer, wherein the first contact structure passes through the second electrode plate. A second contact structure is also present in the second interconnect dielectric material layer and contacts a surface of the first electrode plate, wherein the second contact structure passes through the third electrode plate. Capacitor dielectric materials are located between each of the electrode plates.
0 Citations
18 Claims
-
1. A method of forming a back-end-of-the-line (BEOL) metal-insulator-metal (MIM) capacitor, the method comprising:
-
forming an electrically conductive interconnect structure in a first interconnect dielectric material layer; forming a patterned capacitor material stack above the electrically conductive interconnect structure and the first interconnect dielectric material layer, wherein the patterned capacitor material stack comprises a first capacitor dielectric material, a first metal-containing material, a second capacitor dielectric material and a second metal-containing material, and wherein the second metal-containing material and the second capacitor dielectric material are located atop and overlap the first metal-containing material and the first capacitor dielectric material; forming a second interconnect dielectric material layer laterally surrounding, and located above the patterned capacitor material stack; and forming a first contact structure in the second interconnect dielectric material layer and contacting a surface of the first interconnect dielectric material layer, and a second contact structure in the second interconnect dielectric material layer and contacting a surface of the electrically conductive interconnect structure, wherein the first contact structure passes through first metal-containing material and the first capacitor dielectric material, and the second contact structure passes through second metal-containing material and the second capacitor dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification