DEVICE FOR PROVIDING GAS TO A PLASMA CHAMBER AND A PLASMA PROCESSING DEVICE INCLUDING THE SAME
First Claim
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1. A plasma processing device, comprising:
- a chamber including a space that is configured to perform a treatment process for a wafer;
a supporting member disposed inside of the chamber and configured to support the wafer; and
a gas supply unit configured to inject a mixed gas in different directions toward the supporting member, wherein the pressure of the mixed gas is controlled by adding inert gas to reactive gas.
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Abstract
A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.
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Citations
21 Claims
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1. A plasma processing device, comprising:
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a chamber including a space that is configured to perform a treatment process for a wafer; a supporting member disposed inside of the chamber and configured to support the wafer; and a gas supply unit configured to inject a mixed gas in different directions toward the supporting member, wherein the pressure of the mixed gas is controlled by adding inert gas to reactive gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A device for providing gas to a plasma chamber, comprising:
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an inert gas supply unit supplying inert gas; a gas ratio controller supplying reactive gas, and controlling a supply amount of the reactive gas; an inert gas supply line extended from the inert gas supply unit; a reactive gas supply line extended from the gas ratio controller; and a mixed gas supply line connecting the inert gas supply line to the reactive gas supply line to supply a mixed gas to a mixed gas injection portion disposed in a chamber. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A plasma processing device, comprising:
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a chamber including a first and second space in which a process for a wafer is performed in the first space, and wherein the first space and the second space are not completely isolated from each other; a first gas supply unit injecting a mixed gas in different directions in the first space, wherein a pressure of the mixed gas is controlled by adding inert gas to reactive gas; and a second gas supply unit for injecting low reactive gas or inert gas into the second space. - View Dependent Claims (19, 20)
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21. (canceled)
Specification