DEVICE FOR PROVIDING GAS TO A PLASMA CHAMBER AND A PLASMA PROCESSING DEVICE INCLUDING THE SAME

• US 20200135433A1
• Filed: 05/09/2019
• Published: 04/30/2020
• Est. Priority Date: 10/31/2018
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, HYUNG JUN, KIM, KWANG NAM, KIM, SUNG YEON, SUN, JONG WOO, OH, SANG ROK, HONG, JUNG PYO
• Granted Patent: US 11,289,309 B2
• Time in Patent Office: Days
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32816 Pressure

Abstract

A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Claims

1. A plasma processing device, comprising:

a chamber including a space that is configured to perform a treatment process for a wafer;

a supporting member disposed inside of the chamber and configured to support the wafer; and

a gas supply unit configured to inject a mixed gas in different directions toward the supporting member, wherein the pressure of the mixed gas is controlled by adding inert gas to reactive gas.

2. The plasma processing device of claim 1, wherein the gas supply unit includes:

an inert gas supply unit supplying inert gas; and

an inert gas pressure controller controlling supply pressure of the inert gas.

3. The plasma processing device of claim 2, wherein the gas supply unit further includes:

a gas ratio controller supplying reactive gas, and controlling a supply amount of the reactive gas; and

a backflow preventing portion disposed between the gas ratio controller and an intersection of the inert gas supply line and the reactive gas supply line to prevent the inert gas from flowing toward the gas ratio controller.

4. The plasma processing device of claim 1, wherein the gas supply unit includes:

a first injection portion disposed at a first position of the chamber in which the mixed gas is injected into the chamber; and

a second injection portion disposed at a second position of the chamber in which the mixed gas is injected into the chamber.

5. The plasma processing device of claim 4, wherein the first injection portion injects mixed gas in a first direction and a second direction different from the first direction, and

wherein the second injection portion injects mixed gas in a third direction, different from the first direction and the second direction.

6. The plasma processing device of claim 1, further comprising:

a gas flow controller supplying low reactive gas or inert gas to a lower portion of the chamber.

7. The plasma processing device of claim 4, further comprising a temperature controller coupled to a mixed gas supply line, wherein the mixed gas supply line is connected to the first injection portion and/or the second injection portion.

8. The plasma processing device of claim 4, further comprising a flow rate controller coupled to at least one of the first injection portion and the second injection portion, wherein the first injection portion and the second injection portion each include an inlet hole, and wherein the flow rate controller controls a size of the inlet hole of at least one of the first injection portion and the second injection portion.

9. A device for providing gas to a plasma chamber, comprising:

an inert gas supply unit supplying inert gas;

a gas ratio controller supplying reactive gas, and controlling a supply amount of the reactive gas;

an inert gas supply line extended from the inert gas supply unit;

a reactive gas supply line extended from the gas ratio controller; and

a mixed gas supply line connecting the inert gas supply line to the reactive gas supply line to supply a mixed gas to a mixed gas injection portion disposed in a chamber.

10. The device for providing gas to a plasma chamber of claim 9, wherein each of the inert gas supply line, the reactive gas supply line, the mixed gas injection portion, and the mixed gas supply line are provided in plural, and

wherein at least one of the plurality of mixed gas injection portions injects the mixed gas supplied from the plurality of mixed gas supply lines into the chamber in different directions.

11. The device for providing gas to a plasma chamber of claim 10, further comprising:

an inert gas pressure controller coupled to at least one among the plurality of inert gas supply lines to control supply pressure of the inert gas.

12. The device for providing gas to a plasma chamber of claim 10, further comprising:

a backflow preventing portion coupled to at least one of the plurality of reactive gas supply lines to prevent the inert gas from flowing toward the gas ratio controller.

13. The device for providing gas to a plasma chamber of claim 10, further comprising:

a temperature controller coupled to at least one of the plurality of mixed gas supply lines to control a temperature of the mixed gas.

14. The device for providing gas to a plasma chamber of claim 10, wherein the mixed gas injection portions each include an inlet hole, wherein a flow rate controller is coupled to the least one of the plurality of mixed gas injection portions to control a size of the inlet hole.

15. The device for providing gas to a plasma chamber of claim 10, further comprising:

a gas flow controller supplying low reactive gas or inert gas into the chamber in a position different from a position in which the plurality of mixed gas injection portions are installed.

16. The device for providing gas to a plasma chamber of claim 10, wherein at least one among the plurality of mixed gas injection portions is disposed in an upper portion of the chamber, and

at least one among the plurality of mixed gas injection portions is disposed in a side portion of the chamber.

17. The device for providing gas to a plasma chamber of claim 16, wherein the at least one mixed gas injection portion disposed in an upper portion of the chamber injects mixed gas supplied from two mixed gas supply lines of the plurality of mixed gas supply lines in two or more different directions.

18. A plasma processing device, comprising:

a chamber including a first and second space in which a process for a wafer is performed in the first space, and wherein the first space and the second space are not completely isolated from each other;

a first gas supply unit injecting a mixed gas in different directions in the first space, wherein a pressure of the mixed gas is controlled by adding inert gas to reactive gas; and

a second gas supply unit for injecting low reactive gas or inert gas into the second space.

19. The plasma processing device of claim 18, wherein the first gas supply unit includes:

an inert gas supply unit supplying inert gas; and

an inert gas pressure controller controlling a supply pressure of the inert gas.

20. The plasma processing device of claim 19, wherein the first gas supply unit further includes:

a gas ratio controller supplying reactive gas, and controlling a supply amount of the reactive gas; and

a backflow preventing portion disposed between the gas ratio controller and an intersection of the inert gas supply line and the reactive gas supply line to prevent the inert gas from flowing toward the gas ratio controller.

21. (canceled)