METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20200135446A1
• Filed: 10/26/2018
• Published: 04/30/2020
• Est. Priority Date: 10/26/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: GILDA, Neena Avinash, TSAI, Lien-Yao, NIU, Baohua
• Granted Patent: US 11,062,903 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02172 the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides materials containing silicon H01L21/02123; metal silicates H01L21/02142
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/0231 treatment by exposure to electromagnetic radiation, e.g. UV light
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/02356 treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
• CPC Class Codes: H01L 21/68 for positioning, orientation or alignment
• CPC Class Codes: H01L 21/8222 Bipolar technology
• CPC Class Codes: H10N 30/045 by polarising
• CPC Class Codes: H10N 30/1051 based on piezoelectric or electrostrictive films or coatings

Abstract

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A field is applied to the intermediate layer, wherein the field source does not contact the semiconductor device. The polarity of the intermediate layer is changed by the field to form a desired dipole orientation in the intermediate layer.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming an intermediate layer in the semiconductor device;

applying a field to the intermediate layer without contacting the semiconductor device; and

changing the polarity of the intermediate layer by the field to form a desired dipole orientation in the intermediate layer.

2. The method of claim 1, wherein the applying of the field to the intermediate layer comprises:

exposing the intermediate layer to a light source; and

applying a light field to the intermediate layer.

3. The method of claim 2, wherein the light field provides a radiant energy to the intermediate layer.

4. The method of claim 3, wherein the intermediate layer includes a plurality of dipoles and the plurality of dipoles receive the radiant energy.

5. The method of claim 4, wherein the plurality of dipoles form a stable state with the radiant energy.

6. The method of claim 3, wherein the radiant energy is compatible with a direct band gap of the intermediate layer.

7. The method of claim 2, wherein the light source is an ultraviolet light source.

8. The method of claim 1, wherein the applying of the field to the intermediate layer comprises:

providing a magnetic field in a first direction to the intermediate layer.

9. The method of claim 8, wherein the intermediate layer includes a first group of dipoles and a second group of dipoles.

10. The method of claim 9, wherein the changing of the polarity of the intermediate layer by the field in order to form the desired dipole orientation in the intermediate layer further comprises:

aligning the first group of dipoles with the magnetic field in the first direction to form the desired dipole orientation.

11. The method of claim 9, further comprising:

providing the magnetic field in a second direction to the intermediate layer.

12. The method of claim 11, wherein the changing of the polarity of the intermediate layer by the field in order to form the desired dipole orientation in the intermediate layer further comprises:

aligning the second group of dipoles with the magnetic field in the second direction to form the desired dipole orientation.

13. A method for manufacturing a semiconductor device, comprising:

forming an intermediate layer in a semiconductor device, wherein the intermediate layer includes a plurality of dipoles;

activating a field source to provide a field to the intermediate layer; and

changing the polarity of the plurality of dipoles in the intermediate layer to make the plurality of dipoles form a stable state.

14. The method of claim 13, wherein the field source is a light source.

15. The method of claim 14, wherein the light source is an ultraviolet (UV) light.

16. The method of claim 15, wherein a radiant energy of the UV light source is compatible with a direct band gap of the intermediate layer.

17. The method of claim 13, wherein the field source is a magnetic field generator.

18. An apparatus for manufacturing a semiconductor device, comprising:

a pedestal for supporting a semiconductor device, wherein the semiconductor device has an intermediate layer; and

a field source proximal to the pedestal for generating a field without contacting the semiconductor device,

wherein the polarity of the intermediate layer is changed by the field to form a desired dipole orientation in the intermediate layer.

19. The apparatus of claim 18, wherein the field source is a light source.

20. The apparatus of claim 18, wherein the field source is a magnetic field generator.