SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD

• US 20200135448A1
• Filed: 09/26/2019
• Published: 04/30/2020
• Est. Priority Date: 10/24/2018
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: TANAKA, Hiroshi
• Granted Patent: US 11,227,762 B2
• Time in Patent Office: Days
• CPC Class Codes: B08B 3/10 with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/32134 by liquid etching only
• CPC Class Codes: H01L 21/461 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

A semiconductor manufacturing apparatus includes a chuck stage, a stage rotation mechanism, a chemical liquid nozzle, a chemical liquid nozzle scan mechanism, a lower surface gas nozzle, a gas temperature controller configured to control a temperature of gas to be supplied to the lower surface gas nozzle, a gas bypass pipe configured to allow the gas to be supplied to the lower surface gas nozzle without causing the gas to pass through the gas temperature controller, and first and second on-off valves configured to open and shut to allow either of the gas whose temperature has been controlled by the gas temperature controller and the gas passing through the gas bypass pipe to be supplied to the lower surface gas nozzle. Actuation of the first and second on-off valves allows a temperature of the gas passing through the lower surface gas nozzle to be changed.

Claims

1. A semiconductor manufacturing apparatus comprising:

a chuck stage configured to hold a semiconductor wafer using an end portion of the chuck stage;

a stage rotation mechanism configured to rotate the chuck stage;

a chemical liquid nozzle configured to discharge a chemical liquid to a processing surface of the semiconductor wafer;

a chemical liquid nozzle scan mechanism configured to cause the chemical liquid nozzle to perform a scan on the processing surface of the semiconductor wafer;

a gas nozzle configured to supply gas to an opposite surface opposed to the processing surface of the semiconductor wafer;

a gas temperature controller configured to control a temperature of the gas to be supplied to the gas nozzle;

a gas bypass pipe configured to allow the gas to be supplied to the gas nozzle without causing the gas to pass through the gas temperature controller; and

an on-off valve configured to open and shut to allow either of the gas whose temperature has been controlled by the gas temperature controller and the gas passing through the gas bypass pipe to be supplied to the gas nozzle,

wherein actuation of the on-off valve allows a temperature of the gas passing through the gas nozzle to be changed.

2. The semiconductor manufacturing apparatus according to claim 1, wherein

a discharge port of the gas nozzle is positioned in alignment with a center portion of the semiconductor wafer.

3. The semiconductor manufacturing apparatus according to claim 1, wherein

a discharge port of the gas nozzle is positioned to surround a center portion of the semiconductor wafer.

4. A semiconductor manufacturing method comprising:

performing a chemical liquid process of causing a chemical liquid to spread all over a processing surface of a semiconductor wafer; and

performing a temperature control process of changing a temperature of gas to be supplied,

wherein in the chemical liquid process, the gas whose temperature has been changed in the temperature control process is supplied to an opposite surface opposed to the processing surface of the semiconductor wafer to heat or cool the semiconductor wafer.

5. The semiconductor manufacturing method according to claim 4, further comprising performing a water washing process of washing the processing surface of the semiconductor wafer after the chemical liquid process,

wherein in the water washing process, the gas whose temperature has been changed in the temperature control process is supplied to the opposite surface opposed to the processing surface of the semiconductor wafer to heat or cool the semiconductor wafer.

7. The semiconductor manufacturing method according to claim 4, wherein

the gas whose temperature has been changed is supplied to a center portion of the opposite surface opposed to the processing surface of the semiconductor wafer to heat or cool the semiconductor wafer.

9. The semiconductor manufacturing method according to claim 4, wherein

the gas whose temperature has been changed is supplied to an area around a center portion of the surface opposed to the processing surface of the semiconductor wafer to heat or cool the semiconductor wafer except for the center portion of the semiconductor wafer.

6. A semiconductor manufacturing method comprising:

performing a drying process of drying a processing surface of a semiconductor wafer; and

performing a temperature control process of changing a temperature of gas to be supplied,

wherein in the drying process, the gas whose temperature has been changed in the temperature control process is supplied to an opposite surface opposed to the processing surface of the semiconductor wafer to heat the semiconductor wafer.

8. The semiconductor manufacturing method according to claim 6, wherein

the gas whose temperature has been changed is supplied to a center portion of the opposite surface opposed to the processing surface of the semiconductor wafer to heat or cool the semiconductor wafer.

10. The semiconductor manufacturing method according to claim 6, wherein

the gas whose temperature has been changed is supplied to an area around a center portion of the surface opposed to the processing surface of the semiconductor wafer to heat or cool the semiconductor wafer except for the center portion of the semiconductor wafer.