SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF

• US 20200135450A1
• Filed: 06/19/2019
• Published: 04/30/2020
• Est. Priority Date: 10/26/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: LEE, YUNG-YAO, WANG, WEN-CHIH
• Granted Patent: US 11,244,827 B2
• Time in Patent Office: Days
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G01B 17/06 for measuring contours or curvatures
• CPC Class Codes: G01B 21/08 for measuring thickness
• CPC Class Codes: G01B 2210/56 Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
• CPC Class Codes: G01N 2021/95676 Masks, reticles, shadow masks
• CPC Class Codes: G01N 29/00 Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object G01N3/00, G01N5/00, G01N7/00, G01N9/00, G01N11/00, G01N13/00, G01N15/00, G01N17/00, G01N19/00, G01N21/00, G01N22/00, G01N23/00, G01N24/00, G01N25/00, G01N27/00 take precedence
• CPC Class Codes: G02B 6/4204 the coupling comprising intermediate optical elements, e.g. lenses, holograms encapsulated active devices H01S5/02208, H01L33/52
• CPC Class Codes: G03F 1/38 Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/095 having more than one photosensitive layer G03F7/075 takes precedence
• CPC Class Codes: G03F 7/70033 by plasma extreme ultraviolet [EUV] sources
• CPC Class Codes: G03F 7/70716 Stages
• CPC Class Codes: G03F 9/7026 Focusing
• CPC Class Codes: G03F 9/7034 Leveling
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/0274 Photolithographic processes
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 31/125 Composite devices with photosensitive elements and electroluminescent elements within one single body
• CPC Class Codes: H04B 10/43 : using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver

Abstract

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.

Claims

1. A method for manufacturing a semiconductor structure, comprising:

forming a photo-sensitive layer on a first surface of a semiconductor substrate, the photo-sensitive layer having a top surface;

obtaining a first profile of the first surface of the semiconductor substrate;

obtaining a second profile of the top surface of the photo-sensitive layer;

calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile;

displacing the semiconductor substrate based on the vertical displacement profile.

2. The method of claim 1, further comprising:

exposing the photo-sensitive layer to a radiation after calculating the vertical displacement profile while displacing the semiconductor substrate based on the vertical displacement profile.

3. The method of claim 2, further comprising developing the photo-sensitive layer after exposing the photo-sensitive layer to the radiation.

4. The method of claim 1, wherein the first profile comprises a first distance information between an optical transceiver and the first surface of the semiconductor substrate.

5. The method of claim 4, wherein the optical transceiver emits a light transparent to the photo-sensitive layer.

6. The method of claim 1, wherein the second profile comprises a second distance information between an acoustic transceiver and the top surface of the photo-sensitive layer.

7. The method of claim 6, wherein the acoustic transceiver emits a matter wave having a frequency less than about 500 megahertz.

8. The method of claim 1, wherein the photo-sensitive layer comprises polyimide.

9. A method for manufacturing a semiconductor structure, comprising:

forming a photo resist layer on a first surface of a semiconductor substrate, the photo resist layer having a top surface;

obtaining a first profile of the first surface of the semiconductor substrate through an optical transceiver; and

obtaining a second profile of the top surface of the photo resist layer through an acoustic transceiver,

wherein the first profile and the second profile are measured simultaneously.

10. The method of claim 9, further comprising calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile.

11. The method of claim 9, wherein the optical transceiver emits a light transparent to the photo resist layer.

12. The method of claim 9, wherein the acoustic transceiver emits a matter wave having a frequency less than about 500 megahertz.

13. The method of claim 9, wherein the optical transceiver and the acoustic transceiver scan across the semiconductor substrate simultaneously to obtain the first profile and the second profile.

14. The method of claim 9, wherein a spot size of the optical transceiver is greater than 1 micro meter.

15. The method of claim 9, wherein the first profile comprises a first distance information between an optical transceiver and the first surface of the semiconductor substrate.

16. The method of claim 9, wherein the second profile comprises a second distance information between an acoustic transceiver and the top surface of the photo resist layer.

17. An apparatus for manufacturing a semiconductor structure, comprising:

an optical transceiver, connected to a processing unit;

an acoustic transceiver, connected to the optical transceiver and the processing unit; and

a stage under the optical transceiver and the acoustic transceiver, and connected to the processing unit,

wherein the optical transceiver emits a light transparent to a polymeric material, and the acoustic transceiver emits a matter wave reflected by the polymeric material.

18. The apparatus of claim 17, further comprising a plurality of optical transceivers and a plurality of acoustic transceivers.

19. The apparatus of claim 17, further comprising a light source capable of cross-linking the polymeric material.

20. The apparatus of claim 17, wherein the optical transceiver and the acoustic transceiver are leveled with a baseline.