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SEMICONDUCTOR DEVICE AND METHOD

  • US 20200135462A1
  • Filed: 09/26/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/31/2018
  • Status: Active Grant
First Claim
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1. A method for manufacturing an integrated circuit comprising:

  • forming an opening within a mask over a hard mask material;

    depositing a first gap-filling material along sidewalls of the opening;

    depositing a second gap-filling material within the opening, the second gap-filling material being different from the first gap-filling material, the second gap-filling material comprising a metal oxide or a metal nitride;

    removing the mask;

    etching the first gap-filling material; and

    patterning the hard mask material using the second gap-filling material as a mask.

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