ION IMPLANTATION APPARATUS AND METHOD

• US 20200135470A1
• Filed: 04/11/2019
• Published: 04/30/2020
• Est. Priority Date: 10/29/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: HUANG, Chun-Jung, CHU, Li-Hsin, TSAI, Po-Feng, PENG, Henry, HSU, Kuang Huan, CHEN, Tsung Wei, HSU, Yung-Lin
• Granted Patent: US 11,195,720 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 14/505 for rotation of the substrates
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01L 21/26586 characterised by the angle between the ion beam and the crystal planes or the main crystal surface
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Abstract

The present disclosure describes a system and a method for a ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Claims

1. A system for an ion implantation (IMP) process, comprising:

an ion implanter configured to scan an ion beam over a target for a range of angles;

a tilting mechanism configured to support and tilt the target;

an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target; and

a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

2. The system of claim 1, wherein the ion implanter further comprises an ion scanner.

3. The system of claim 1, wherein the distribution and number of ejected ions comprise a percentage of ions distributed in a plurality of angle sub-ranges within the range of angles, and wherein the correction angle is based on a weighted sum of the percentage multiplied by an average angle of the plurality of angle sub-ranges.

4. The system of claim 3, wherein an upper limit of the range of angles is equal to a maximum scan angle of the ion implanter.

5. The system of claim 1, wherein the tilting mechanism comprises a tilt stage, a load support portion, or a substrate holder.

6. The system of claim 1, wherein the ion-collecting device comprises an atom probe.

7. The system of claim 1, wherein the adjusted tilt angle is equal to a sum of the tilt angle and the correction angle in response to the correction angle being a positive value, and wherein the adjusted tilt angle is equal to a difference between the tilt angle and the correction angle in response to the correction angle being a negative value.

8. The system of claim 1, wherein the tilting mechanism is configured to tilt the target to increase the tilt angle in response to the adjusted tilt angle being equal to the sum of the tilt angle and the correction angle, and decrease the tilt angle in response to the adjusted angle being equal to the difference of the tilt angle and the correction angle.

9. The system of claim 1, wherein the control unit comprises a micro-controller.

10. The system of claim 1, wherein the communication mechanism comprises at least one of a local area network (LAN) and a WiFi network.

11. A method for an ion implantation (IMP) process, comprising:

scanning an ion beam over a target for a range of angles;

collecting a distribution and a number of ejected ions from the ion beam scan over the target;

determining a correction angle based on the distribution and number of ejected ions; and

adjusting a tilt angle of the target based on the correction angle.

12. The method of claim 11, further comprising generating, with an IMP device, the ion beam.

13. The method of claim 11, wherein scanning the ion beam comprises scanning a plurality of angle sub-ranges within the range of angles.

14. The method of claim 13, wherein determining the correction angle comprises:

calculating a plurality of weights based on a percentage of ions distributed in each of the plurality of angle sub-ranges over a total number of ions distributed in the range of angles; and

calculating a weighted sum of average angles of the plurality of angle sub-ranges based on the plurality of weights.

15. The method of claim 11, wherein adjusting the tilt angle comprises:

adding the correction angle to the tilt angle in response to the correction angle being a positive value; and

subtracting the correction angle from the tilt angle in response to the correction angle being a negative value.

16. The method of claim 11, wherein adjusting the tilt angle comprises rotating the target so that an angle between the ion beam and the target surface is equal to the tilt angle.

17. The method of claim 11, further comprising providing a substrate as the target.

18. A method for an ion implantation (IMP) process, comprising:

scanning an ion beam over a first target for a range of angles;

determining a correction angle based on a distribution and a number of ejected ions from the ion beam scan over the first target;

adjusting a tilt angle of the first target based on the correction angle; and

irradiating a second target with the ion beam at the adjusted tilt angle.

19. The method of claim 18, wherein determining the correction angle comprises:

calculating a plurality of weights based on a percentage of ions distributed in each of a plurality of angle sub-ranges, within the range of angles, over a total number of ions distributed in the range of angles; and

calculating a weighted sum of average angles of the plurality of angle sub-ranges based on the plurality of weights.

20. The method of claim 18, wherein adjusting the tilt angle comprises:

adding the correction angle to the tilt angle in response to the correction angle being a positive value; and

subtracting the correction angle from the tilt angle in response to the correction angle being a negative value.