SEMICONDUCTOR STRUCTURE ETCHING SOLUTION AND METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE USING THE SAME ETCHING SOLUTION
First Claim
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1. A semiconductor structure etching solution, comprising:
- an etchant;
an ionic strength enhancer having an ionic strength greater than 10−
3 M in the semiconductor structure etching solution; and
a solvent having a dielectric constant lower than a dielectric constant of water.
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Abstract
The present disclosure provides a semiconductor structure etching solution, including an etchant, an ionic strength enhancer having an ionic strength greater than 10−3 M in the semiconductor structure etching solution, and a solvent having a dielectric constant lower than a dielectric constant of water.
9 Citations
20 Claims
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1. A semiconductor structure etching solution, comprising:
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an etchant; an ionic strength enhancer having an ionic strength greater than 10−
3 M in the semiconductor structure etching solution; anda solvent having a dielectric constant lower than a dielectric constant of water. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of transporting an etchant to a bottom of a semiconductor trench having an opening smaller than 20 nm, the method comprising:
applying an ionic strength enhancer with the etchant to the semiconductor trench. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of removing a stripe having a line width smaller than 20 nm in a semiconductor structure, the method comprising:
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forming a stripe; forming a sidewall spacer surrounding a sidewall of the stripe; and applying an etching solution to the stripe thereby obtaining a stripe trench, wherein the etching solution comprises; an ionic strength enhancer having an ionic strength greater than 10−
3 M in the etching solution;a solvent; and an etchant. - View Dependent Claims (17, 18, 19, 20)
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Specification