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SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

  • US 20200135481A1
  • Filed: 01/09/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/28/2018
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a fin strip over a semiconductor substrate using a hardmask, wherein the fin strip comprises a first portion and a second portion laterally adjoining the first portion;

    forming a bottom anti-reflective coating (BARC) layer to cover the fin strip over the substrate;

    performing a first etching operation to remove a first portion of the BARC layer, so as to expose a portion of the hardmask overlying the second portion of the fin strip;

    depositing a coating layer over the portion of the hardmask and the BARC layer;

    performing a second etching operation to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer; and

    performing a third etching operation to remove the second portion of the fin strip and a remaining BARC layer, such that the first portion of the fin strip forms a plurality of semiconductor fins.

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