SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
First Claim
1. A method, comprising:
- forming a fin strip over a semiconductor substrate using a hardmask, wherein the fin strip comprises a first portion and a second portion laterally adjoining the first portion;
forming a bottom anti-reflective coating (BARC) layer to cover the fin strip over the substrate;
performing a first etching operation to remove a first portion of the BARC layer, so as to expose a portion of the hardmask overlying the second portion of the fin strip;
depositing a coating layer over the portion of the hardmask and the BARC layer;
performing a second etching operation to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer; and
performing a third etching operation to remove the second portion of the fin strip and a remaining BARC layer, such that the first portion of the fin strip forms a plurality of semiconductor fins.
1 Assignment
0 Petitions
Accused Products
Abstract
A fin strip is formed over a substrate using a hardmask. The fin strip includes a first portion and a second portion laterally adjoining the first portion. A BARC layer is formed to cover the fin strip over the substrate. A first etching operation is performed to remove a first portion of the BARC layer, so as to expose a portion of the hardmask where the first portion of the fin strip underlies. A coating layer is deposited over the portion of the hardmask and the BARC layer. A second etching operation is performed to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer. A third etching operation is performed to remove the first portion of the fin strip and a remaining BARC layer, such that the second portion of the fin strip forms a plurality of semiconductor fins.
0 Citations
20 Claims
-
1. A method, comprising:
-
forming a fin strip over a semiconductor substrate using a hardmask, wherein the fin strip comprises a first portion and a second portion laterally adjoining the first portion; forming a bottom anti-reflective coating (BARC) layer to cover the fin strip over the substrate; performing a first etching operation to remove a first portion of the BARC layer, so as to expose a portion of the hardmask overlying the second portion of the fin strip; depositing a coating layer over the portion of the hardmask and the BARC layer; performing a second etching operation to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer; and performing a third etching operation to remove the second portion of the fin strip and a remaining BARC layer, such that the first portion of the fin strip forms a plurality of semiconductor fins. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method, comprising:
-
forming a plurality of fin strips over a semiconductor substrate using a hardmask, thereby forming trenches each of which is disposed between two adjacent ones of the fin strips, wherein each of the fin strips comprises a first portion and a second portion adjoining the first portion along an extending direction of the fin strips, the trenches comprise a first trench and a second trench having a greater width than the first trench; forming a bottom anti-reflective coating (BARC) layer in the trenches to cover the fin strips over the substrate; performing a first etching operation to remove a first portion of the BARC layer over the second portion of the fin strips, so as to expose a portion of the hardmask overlying the second portion of the fin strips, such that a top surface of the BARC layer in the first trench is lower than a top surface of the BARC layer in the second trench; depositing a coating layer over the portion of the hardmask and the BARC layer; performing a second etching operation to remove a portion of the coating layer, the portion of the hardmask and a second portion of the BARC layer; and performing a third etching operation to remove the first portion of each of the fin strips and a remaining BARC layer, such that the second portion of each of the fin strips forms a plurality of semiconductor fins. - View Dependent Claims (9, 10, 11, 12, 13, 14)
-
-
15. A semiconductor device, comprising:
-
a substrate; a first semiconductor fin and a second semiconductor fin over the substrate, wherein the second semiconductor fin is disposed adjacent to the first semiconductor fin along an extending direction of the first semiconductor fin, and the first semiconductor fin has a first end portion oppositely spaced apart from a second end portion of the second semiconductor fin; and a gate structure crossing the first and second semiconductor fins, wherein the gate structure comprises a gate electrode overlapping the first end portion and the second end portion. - View Dependent Claims (16, 17, 18, 19, 20)
-
Specification