SEMICONDUCTOR LAYER, OSCILLATION ELEMENT, AND SEMICONDUCTOR LAYER MANUFACTURING METHOD
First Claim
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1. A semiconductor layer comprising:
- a pn junction at which an n-type semiconductor layer and a p-type semiconductor layer are joined, the n-type semiconductor layer having a donor level that is formed by causing an aluminum oxide film to excessively contain aluminum, the p-type semiconductor layer having an acceptor level that is formed by causing an aluminum oxide film to excessively contain oxygen.
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Abstract
A semiconductor layer of the present invention is a semiconductor layer including: a pn junction at which an n-type semiconductor (Al2O3 (n-type)) and a p-type semiconductor (Al2O3 (p-type)) are joined, the n-type semiconductor (Al2O3 (n-type)) having a donor level that is formed by causing an aluminum oxide film (Al2O3) to excessively contain aluminum (Al), the p-type semiconductor (Al2O3 (p-type)) having an acceptor level that is formed by causing an aluminum oxide film (Al2O3) to excessively contain oxygen (O).
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Citations
13 Claims
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1. A semiconductor layer comprising:
a pn junction at which an n-type semiconductor layer and a p-type semiconductor layer are joined, the n-type semiconductor layer having a donor level that is formed by causing an aluminum oxide film to excessively contain aluminum, the p-type semiconductor layer having an acceptor level that is formed by causing an aluminum oxide film to excessively contain oxygen.
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2. A semiconductor layer comprising a p-type semiconductor layer having an acceptor level that is formed by causing an aluminum oxide film to excessively contain oxygen.
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3. A method for manufacturing a semiconductor layer, comprising the steps of:
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bringing metallic aluminum and a probe into contact with a first surface and a second surface, respectively, of an aluminum oxide film so as to melt the aluminum oxide film in atmosphere, oxygen-containing gas, or oxygen gas by applying, between the metallic aluminum serving as an anode and the probe serving as a cathode, a voltage at which a dielectric breakdown occurs in the aluminum oxide film; and by causing, in the aluminum oxide film which is being melted, a molten salt electrolysis reaction so as to cool the aluminum oxide film, forming an n-type semiconductor layer and a p-type semiconductor layer on the metallic aluminum side and the probe side, respectively, of the aluminum oxide film, and joining the n-type semiconductor layer and the p-type semiconductor layer. - View Dependent Claims (5, 6, 7)
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4. A method for manufacturing a semiconductor layer, comprising the steps of:
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bringing metallic aluminum and a probe into contact with a first surface and a second surface, respectively, of an aluminum oxide film so as to melt the aluminum oxide film in atmosphere, gas, or a vacuum by applying, between the metallic aluminum serving as a cathode and the probe serving as an anode, a voltage at which a dielectric breakdown occurs in the aluminum oxide film; and by causing, in the aluminum oxide film which is being melted, a molten salt electrolysis reaction so as to cool the aluminum oxide film, forming a p-type semiconductor layer and an n-type semiconductor layer on the metallic aluminum side and the probe side, respectively, of the aluminum oxide film, and joining the n-type semiconductor layer and the p-type semiconductor layer.
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8. An oscillation element comprising:
a pn junction at which an n-type semiconductor layer and a p-type semiconductor layer are joined, the n-type semiconductor layer having a donor level that is formed by causing an aluminum oxide film to excessively contain aluminum, the p-type semiconductor layer having an acceptor level that is formed by causing an aluminum oxide film to excessively contain oxygen.
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9. A method for manufacturing an oscillation element, comprising the steps of:
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bringing metallic aluminum and a probe into contact with a first surface and a second surface, respectively, of an aluminum oxide film so as to melt the aluminum oxide film in atmosphere, oxygen-containing gas, or oxygen gas by applying, between the metallic aluminum serving as an anode and the probe serving as a cathode, a voltage at which a dielectric breakdown occurs in the aluminum oxide film; and by causing, in the aluminum oxide film which is being melted, a molten salt electrolysis reaction so as to cool the aluminum oxide film, forming an n-type semiconductor layer and a p-type semiconductor layer on the metallic aluminum side and the probe side, respectively, of the aluminum oxide film, and joining the n-type semiconductor layer and the p-type semiconductor layer, a depletion layer, formed by joining the n-type semiconductor layer and the p-type semiconductor layer, having a thickness of not more than 1 nm. - View Dependent Claims (11)
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10. A method for manufacturing an oscillation element, comprising the steps of:
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bringing metallic aluminum and a probe into contact with a first surface and a second surface, respectively, of an aluminum oxide film so as to melt the aluminum oxide film in atmosphere, gas, or a vacuum by applying, between the metallic aluminum serving as a cathode and the probe serving as an anode, a voltage at which a dielectric breakdown occurs in the aluminum oxide film; and by causing, in the aluminum oxide film which is being melted, a molten salt electrolysis reaction so as to cool the aluminum oxide film, forming a p-type semiconductor layer and an n-type semiconductor layer on the metallic aluminum side and the probe side, respectively, of the aluminum oxide film, and joining the n-type semiconductor layer and the p-type semiconductor layer, a depletion layer, formed by joining the n-type semiconductor layer and the p-type semiconductor layer, having a thickness of not more than 1 nm.
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12. A method for manufacturing a semiconductor layer, comprising the steps of:
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bringing metallic aluminum and a probe into contact with a first surface and a second surface, respectively, of an aluminum oxide film so as to melt the aluminum oxide film in atmosphere, oxygen-containing gas, or oxygen gas by applying, between the metallic aluminum serving as an anode and the probe serving as a cathode, a voltage at which a dielectric breakdown occurs in the aluminum oxide film; and by causing, in the aluminum oxide film which is being melted, a molten salt electrolysis reaction so as to cool the aluminum oxide film, (1) forming an n-type semiconductor layer on the metallic aluminum side of the aluminum oxide film or (2) forming a p-type semiconductor layer on the probe side of the aluminum oxide film.
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13. A method for manufacturing a semiconductor layer, comprising the steps of:
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bringing metallic aluminum and a probe into contact with a first surface and a second surface, respectively, of an aluminum oxide film so as to melt the aluminum oxide film in atmosphere, gas, or a vacuum by applying, between the metallic aluminum serving as a cathode and the probe serving as an anode, a voltage at which a dielectric breakdown occurs in the aluminum oxide film; and by causing, in the aluminum oxide film which is being melted, a molten salt electrolysis reaction so as to cool the aluminum oxide film, (1) forming an n-type semiconductor layer on the metallic aluminum side of the aluminum oxide film or (2) forming a p-type semiconductor layer on the probe side of the aluminum oxide film.
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Specification