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SUBSTRATE PROCESSING APPARATUS

  • US 20200135504A1
  • Filed: 12/30/2019
  • Published: 04/30/2020
  • Est. Priority Date: 09/30/2014
  • Status: Abandoned Application
First Claim
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1. A substrate processing apparatus, comprising:

  • a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed;

    a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed;

    a gas discharge nozzle provided to the nozzle head and configured to discharge a gas to the surface to be processed;

    a gas supply source;

    an air supply pipe connecting the gas supply source and the gas discharge nozzle;

    a flow rate control valve provided to the air supply pipe;

    a drain part located at a bottom of the recess of the nozzle head; and

    a controller, whereinthe controller is configured to control the flow rate control valve to switch the flow rate of the gas discharged from the gas discharge nozzle between first flow rate and second flow rate,the first flow rate is a flow rate at which the gas discharged from the gas discharge nozzle does not reach the surface to be processed of the substrate, while the second flow rate is a flow rate at which the gas discharged from the gas discharge nozzle reaches the surface to be processed, andthe controller is further configured to control the flow rate control valve such thatthere is a period in which the gas is discharged from the gas discharge nozzle at the first flow rate in a period from the end of rinsing process for the surface to be processed using the treatment liquid to the start of drying process for the surface to be processed using the gas, andthe gas is discharged from the gas discharge nozzle at the second flow rate during the drying process.

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