SUBSTRATE PROCESSING APPARATUS

• US 20200135504A1
• Filed: 12/30/2019
• Published: 04/30/2020
• Est. Priority Date: 09/30/2014
• Status: Abandoned Application

• Current Assignee: Shibaura Mechatronics Corporation
• Original Assignee: Shibaura Mechatronics Corporation
• Inventors: HAYASHI, Konosuke, OOTAGAKI, Takashi
• Application Number:
  US16/730,661
• Publication Number:
  US 20200135504A1
• Time in Patent Office: Days
• CPC Class Codes: B08B 2203/0288 Ultra or megasonic jets
• CPC Class Codes: B08B 3/02 Cleaning by the force of jets or sprays
• CPC Class Codes: B08B 3/08 the liquid having chemical or dissolving effect substances used, see the relevant classes
• CPC Class Codes: B08B 3/10 with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/6715 Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence
• CPC Class Codes: H01L 21/68728 characterised by a plurality of separate clamping members, e.g. clamping fingers
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 21/68792 characterised by the construction of the shaft

Abstract

A substrate processing apparatus includes: a removing part configured to remove liquid droplets present in a recess; a drain hole located at the bottom of the recess of a nozzle head, and configured to discharge the liquid droplets as a target to be removed out of the recess; and a controller configured to control the discharge state of a gas discharge nozzle such that there is a period in which a gas is discharged from the gas discharge nozzle at a flow rate, at which the gas discharged does not reach a surface to be processed of the substrate, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.

Claims

1. A substrate processing apparatus, comprising:

a nozzle head that faces a surface to be processed of a substrate and has a recess with its opening toward the surface to be processed;

a treatment liquid supply nozzle provided to the nozzle head and configured to supply a treatment liquid to the surface to be processed;

a gas discharge nozzle provided to the nozzle head and configured to discharge a gas to the surface to be processed;

a gas supply source;

an air supply pipe connecting the gas supply source and the gas discharge nozzle;

a flow rate control valve provided to the air supply pipe;

a drain part located at a bottom of the recess of the nozzle head; and

a controller, wherein

the controller is configured to control the flow rate control valve to switch the flow rate of the gas discharged from the gas discharge nozzle between first flow rate and second flow rate,

the first flow rate is a flow rate at which the gas discharged from the gas discharge nozzle does not reach the surface to be processed of the substrate, while the second flow rate is a flow rate at which the gas discharged from the gas discharge nozzle reaches the surface to be processed, and

the controller is further configured to control the flow rate control valve such that

there is a period in which the gas is discharged from the gas discharge nozzle at the first flow rate in a period from the end of rinsing process for the surface to be processed using the treatment liquid to the start of drying process for the surface to be processed using the gas, and

the gas is discharged from the gas discharge nozzle at the second flow rate during the drying process.

2. The substrate processing apparatus according to claim 1, wherein

the gas discharge nozzle is a nozzle that is formed to protrude from a surface of the nozzle head, and configured to discharge a gas to the surface to be processed, and

the nozzle includes a hole that allows the gas to be discharged toward the recess in a direction perpendicular to discharge direction of the gas.

3. The substrate processing apparatus according to claim 1, further comprising a cover located between the nozzle head and the substrate, wherein

the cover has an opening that the gas passes, and is configured to let the gas discharged from the gas discharge nozzle of the nozzle head pass through the opening to perform treatment on the surface to be processed.

4. The substrate processing apparatus according to claim 1, wherein

a discharge port is located in a surface of the recess, and

a removing material is discharged toward the drain part located at the bottom to remove liquid droplets present in the recess.

5. The substrate processing apparatus according to claim 4, wherein the discharge port is formed annularly in the surface of the recess.

6. The substrate processing apparatus according to claim 4, wherein

the discharge port is located in an upper portion of the recess, and is arranged in an orientation which is perpendicular to a line that connects the discharge port and the drain part with a shortest distance, and

the removing material can be discharged along the surface of the recess.

7. The substrate processing apparatus according to claim 1, further comprising a vibrator configured to vibrate the nozzle head.

8. The substrate processing apparatus according to claim 1, further comprising a heater configured to heat the nozzle head.

9. The substrate processing apparatus according to claim 1, further comprising a suction part connected to the drain part, and configured to suck liquid droplets of the treatment liquid present in the recess.

10. The substrate processing apparatus according to claim 1, wherein the recess includes a groove that is formed to connect an upper portion of the recess and the drain part with a shortest distance.

11. The substrate processing apparatus according to claim 1, wherein the recess includes a groove that is formed in a spiral shape extending from an upper portion of the recess to the drain part.

12. The substrate processing apparatus according to claim 11, wherein the groove formed in a spiral shape winds in the same direction as rotation direction of the substrate on which treatment is being performed.

13. The substrate processing apparatus according to claim 1, wherein a surface of the recess of the nozzle head is roughened to avoid retention of liquid droplets to be removed.

14. The substrate processing apparatus according to claim 1, wherein a porous material is applied to a surface of the recess of the nozzle head.

15. The substrate processing apparatus according to claim 1, wherein the recess of the nozzle head is formed of a porous material.