Shape-Distortion Standards for Calibrating Measurement Tools for Nominally Flat Objects

• US 20200135519A1
• Filed: 10/25/2019
• Published: 04/30/2020
• Est. Priority Date: 10/29/2018
• Status: Active Application

• Current Assignee: KLA Corporation
• Original Assignee: KLA Corporation
• Inventors: Quli, Farhat A., Chow, Winfred
• Application Number:
  US16/664,788
• Publication Number:
  US 20200135519A1
• Time in Patent Office: Days
• CPC Class Codes: G01B 11/306 for measuring evenness
• CPC Class Codes: G01B 21/042 Calibration or calibration artifacts G01B3/30, G01B9/02072 take precedence
• CPC Class Codes: G01B 2210/56 Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
• CPC Class Codes: G01B 7/345 for measuring evenness
• CPC Class Codes: H01L 21/67288 Monitoring of warpage, curvature, damage, defects or the like
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A first nominally flat object is obtained that has a controlled warpage that has been measured in a manner traceable through a standard reference material to a fundamental unit of measurement. A measurement tool is calibrated using the first nominally flat object. After calibrating the measurement tool using the first nominally flat object, the warpage of a plurality of nominally flat objects is measured using the measurement tool, wherein the plurality of nominally flat objects is distinct from the first nominally flat object.

Claims

1. A method, comprising:

fabricating a nominally flat object with a controlled warpage;

making a measurement of the warpage of the nominally flat object, the measurement being traceable through a standard reference material to a fundamental unit of measurement; and

providing the nominally flat object as a reference object for calibrating a measurement tool.

2. The method of claim 1, wherein:

making the measurement is performed using a measurement system; and

the method further comprises calibrating the measurement system using the standard reference material before making the measurement.

3. The method of claim 1, wherein the nominally flat object comprises a semiconductor wafer.

4. The method of claim 3, wherein the semiconductor wafer is a silicon wafer.

5. The method of claim 4, wherein fabricating the nominally flat object comprises:

growing an oxide on both sides of the silicon wafer; and

removing the oxide from one side of the silicon wafer.

6. The method of claim 1, wherein fabricating the nominally flat object comprises:

heating the nominally flat object and a substrate, wherein the substrate and the nominally flat object have different coefficients of thermal expansion;

with the nominally flat object heated and the substrate heated, bonding a substrate to the nominally flat object; and

after bonding the substrate to the nominally flat object, cooling the substrate and the nominally flat object.

7. The method of claim 1, wherein fabricating the nominally flat object comprises machining or polishing the nominally flat object to produce the warpage.

8. The method of claim 1, wherein fabricating the nominally flat object comprises depositing a film on one side of the nominally flat object, wherein the film induces stress in the nominally flat object to cause the warpage.

9. The method of claim 1, wherein fabricating the nominally flat object comprises thinning the nominally flat object to enhance the warpage.

10. The method of claim 1, wherein making the measurement comprises:

positioning the nominally flat object on a transparent optical flat;

shining laser light through the optical flat onto the surface of a bottom side of the nominally flat object; and

measuring a phase shift between the laser light reflected from a surface of the optical flat and the laser light reflected from the bottom side of the nominally flat object.

11. The method of claim 10, wherein:

shining the laser light and measuring the phase shift are performed at multiple locations on the nominally flat object; and

making the measurement further comprises measuring the thickness of the nominally flat object at the multiple locations.

12. The method of claim 1, wherein making the measurement comprises measuring heights of respective positions of the nominally flat object above an underlying surface using one or more non-contact probes.

13. The method of claim 12, wherein the one or more non-contact probes are selected from the group consisting of one or more capacitive probes, one or more infrared probes, and one or more visible-light probes.

14. The method of claim 1, wherein making the measurement comprises:

tracking a laser across the surface of a top side of the nominally flat object; and

while tracking the laser across the surface, measuring change in an angle of reflectance of laser light from the laser, the laser light being reflected by the nominally flat object.

15. A method, comprising:

obtaining a first nominally flat object having a controlled warpage that has been measured in a manner traceable through a standard reference material to a fundamental unit of measurement;

calibrating a measurement tool using the first nominally flat object; and

after calibrating the measurement tool using the first nominally flat object, measuring the warpage of a plurality of nominally flat objects using the measurement tool, wherein the plurality of nominally flat objects is distinct from the first nominally flat object.

16. The method of claim 15, wherein the first nominally flat object and the plurality of nominally flat objects comprise semiconductor wafers.

17. The method of claim 15, wherein the semiconductor wafers are silicon wafers.

18. The method of claim 15, wherein the first nominally flat object is a silicon wafer with an oxide film on a first side and without an oxide film on a second side.

19. The method of claim 15, wherein the plurality of nominally flat objects is semiconductor wafers with semiconductor devices fabricated on them, the warpage of the plurality of nominally flat objects resulting at least in part from film layers deposited on each semiconductor wafer to form the semiconductor devices.

20. The method of claim 15, wherein calibrating the measurement tool using the first nominally flat object comprises:

measuring the warpage of the first nominally flat object using the measurement tool;

comparing the measured warpage of the first nominally flat object to warpage data for the first nominally flat object to determine a difference between the measured warpage and the warpage data, the warpage data being traceable through the standard reference material to the fundamental unit of measurement; and

adjusting the measurement tool based on the difference.

21. The method of claim 15, wherein:

the plurality of the nominally flat objects comprises multiple groups of the nominally flat objects; and

the method further comprises re-calibrating the measurement tool using the first nominally flat object after measuring the warpage of each group of the nominally flat objects.

22. The method of claim 15, wherein:

the measurement tool is an interferometric measurement tool; and

calibrating the measurement tool and measuring the shape of the plurality of nominally flat objects comprise performing interferometry.

23. An inspection system, comprising:

a measurement tool for measuring warpage of nominally flat objects;

one or more processors; and

memory storing one or more programs for execution by the one or more processors, the one or more programs comprising instructions for;

calibrating a measurement tool using a first nominally flat object having a controlled warpage that has been measured in a manner traceable through a standard reference material to a fundamental unit of measurement; and

after calibrating the measurement tool using the first nominally flat object, measuring the warpage of a plurality of nominally flat objects using the measurement tool, wherein the plurality of nominally flat objects is distinct from the first nominally flat object.