APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor processing apparatus comprising:
- a chamber housing;
an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer;
an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring; and
a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform,wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, andwherein the negative voltage has a magnitude that increases during the second time period.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.
9 Citations
21 Claims
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1. A semiconductor processing apparatus comprising:
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a chamber housing; an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer; an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring; and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An apparatus for manufacturing a semiconductor device, the apparatus comprising:
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a first bias electrode connected to a lower portion of an electrostatic chuck, the electrostatic chuck configured to receive a semiconductor wafer, the first bias electrode configured to receive first bias power having a pulse signal; a second bias electrode disposed above the electrostatic chuck, the second bias electrode configured to receive second bias power; and an edge ring surrounding the electrostatic chuck, the edge ring configured to receive a ring voltage synchronized with at least one of the first bias power and the second bias power, wherein a period of the ring voltage is divided into a first time period, a second time period, and a third time period, and wherein the ring voltage has a constant positive voltage during the first time period and a gradually increasing negative voltage during the second time period. - View Dependent Claims (14, 15, 16, 17)
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18. An apparatus for manufacturing a semiconductor device, the apparatus comprising:
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a bias power supply configured to supply a bias power to an electrode disposed in a semiconductor process chamber; a chuck voltage supply configured to supply an electrostatic chuck voltage to an electrostatic chuck disposed in the semiconductor process chamber, the electrostatic chuck configured to hold a semiconductor wafer; and a ring voltage supply configured to supply a ring voltage to an edge ring surrounding the electrostatic chuck to control a thickness of a plasma sheath region, the ring voltage having a constant positive voltage during a first time period of the ring voltage and a gradually increasing negative voltage during a second time period of the ring voltage. - View Dependent Claims (19, 20)
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21-27. -27. (canceled)
Specification