ELECTROSTATIC CHUCK

• US 20200135529A1
• Filed: 09/19/2019
• Published: 04/30/2020
• Est. Priority Date: 10/30/2018
• Status: Active Grant

• Current Assignee: Toto Limited
• Original Assignee: Toto Limited
• Inventors: SHIRAISHI, Jun, SAIGAN, Shuichiro, MORI, Tatsuya, WATANABE, Masahiro
• Granted Patent: US 11,626,310 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass

Abstract

According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a first porous part. The ceramic dielectric substrate has a first major surface and a second major surface on opposite side from the first major surface. The base plate supports the ceramic dielectric substrate and includes a gas feed channel. The first porous part is provided at a position between the base plate and the first major surface of the ceramic dielectric substrate. The position is opposed to the gas feed channel. The first porous part includes a plurality of sparse portions each including a plurality of pores. The plurality of sparse portions are spaced from each other. Each of the plurality of sparse portions extends in a direction inclined by a prescribed angle with respect to a first direction from the base plate to the ceramic dielectric substrate.

Claims

1. An electrostatic chuck comprising:

a ceramic dielectric substrate having a first major surface for mounting a suction target and a second major surface on opposite side from the first major surface;

a base plate supporting the ceramic dielectric substrate and including a gas feed channel; and

a first porous part provided at a position between the base plate and the first major surface of the ceramic dielectric substrate, the position being opposed to the gas feed channel,

the first porous part including a plurality of sparse portions each including a plurality of pores, the plurality of sparse portions being spaced from each other, and

each of the plurality of sparse portions extending in a direction inclined by a prescribed angle with respect to a first direction from the base plate to the ceramic dielectric substrate.

2. The electrostatic chuck according to claim 1, wherein the plurality of pores are configured so that a gas fed from the gas feed channel can flow therethrough.

3. The electrostatic chuck according to claim 1, wherein the angle between the first direction and the extending direction of the sparse portion is 5°

or more and 30°

or less.

4. The electrostatic chuck according to claim 1, wherein

the first porous part further includes a dense portion located between the plurality of sparse portions and having a higher density than the sparse portion,

the sparse portion includes a wall part provided between the pores, and

in a direction generally orthogonal to the direction inclined by the prescribed angle with respect to the first direction, minimum dimension of the wall part is smaller than minimum dimension of the dense portion.

5. The electrostatic chuck according to claim 1, wherein

the ceramic dielectric substrate includes a first hole part located between the first major surface and the first porous part,

at least one of the ceramic dielectric substrate and the first porous part includes a second hole part located between the first hole part and first porous part, and

in a second direction generally orthogonal to the first direction, dimension of the second hole part is smaller than dimension of the first porous part and larger than dimension of the first hole part.

6. The electrostatic chuck according to claim 1, wherein

a plurality of pores provided in the second porous part are further dispersed in three dimensions than a plurality of pores provided in the first porous part, and

proportion of pores penetrating in the first direction is higher in the first porous part than in the second porous part.

7. The electrostatic chuck according to claim 1, wherein average value of diameter of the plurality of pores provided in the second porous part is larger than average value of diameter of the plurality of pores provided in the first porous part.

8. The electrostatic chuck according to claim 1, wherein average value of diameter of the plurality of pores provided in the second porous part is smaller than average value of diameter of the plurality of pores provided in the first porous part.

9. The electrostatic chuck according to claim 1, further comprising:

a second porous part provided between the first porous part and the gas feed channel, and including a plurality of pores,

variation of diameter of the plurality of pores provided in the first porous part is smaller than variation of diameter of a plurality of pores provided in the second porous part.

10. The electrostatic chuck according to claim 1, wherein

the first porous part and the ceramic dielectric substrate are composed primarily of aluminum oxide, and

purity of the aluminum oxide of the ceramic dielectric substrate is higher than purity of the aluminum oxide of the first porous part.

11. The electrostatic chuck according to claim 1, further comprising:

a second porous part provided between the first porous part and the gas feed channel,

the ceramic dielectric substrate including a first hole part being located between the first major surface and the first porous part,

the second porous part including

a ceramic porous body including a plurality of pores, and

a compact section more compact than the ceramic porous body,

as projected on a plane perpendicular to a first direction from the base plate to the ceramic dielectric substrate, the compact section being configured to overlap the first hole part, and the second porous section being configured not to overlap the first hole part.

12. The electrostatic chuck according to claim 1, wherein

The ceramic porous body includes a plurality of sparse portions including a plurality of pores and a dense portion having a density higher than a density of the sparse portions,

in the ceramic porous body,

each of the plurality of sparse portions extends in the first direction, and the dense portion is located between the plurality of sparse portions,

the sparse portions include a wall part provided between the pores, and

in the second direction, minimum dimension of the wall part is smaller than minimum dimension of the dense portion.

13. The electrostatic chuck according to claim 1, wherein

when a direction generally orthogonal to the first direction is taken as a second direction,

the first porous part includes a first region located on the ceramic dielectric substrate side in the second direction,

the ceramic dielectric substrate includes a first substrate region located on the first region side in the second direction,

the first region is provided to be in contact with the first substrate region, and

an average grain size in the first region is different from an average grain size in the first substrate region.

14. The electrostatic chuck according to claim 12, wherein

the average grain size in the first substrate region is smaller than the average grain size in the first region.

15. The electrostatic chuck according to claim 12, wherein

the ceramic dielectric substrate includes a second substrate region,

the first substrate region is located between the second substrate region and the first porous part, and

the average grain size in the first substrate region is smaller than the average grain size in the second substrate region.

16. The electrostatic chuck according to claim 15, wherein

the average grain size in the first region is smaller than the average grain size in the second substrate region.

17. The electrostatic chuck according to claim 12, wherein

the average grain size in the first region is smaller than the average grain size in the first substrate region.