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SELECTIVE DEPOSITION OF DIELECTRICS ON ULTRA-LOW K DIELECTRICS

  • US 20200135544A1
  • Filed: 10/24/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/24/2018
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, the method comprising:

  • forming a via in a first dielectric layer arranged on a metal layer, the via exposing a portion of the metal layer;

    forming a trench in the first dielectric layer;

    forming a self-assembled monolayer on the portion of the metal layer exposed by an opening in the via; and

    depositing, by a selective process, a second dielectric layer on the first dielectric layer such that the second dielectric layer lines sidewalls of the via and the trench and is selectively deposited onto the first dielectric layer.

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