×

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

  • US 20200135548A1
  • Filed: 01/16/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/26/2018
  • Status: Active Grant
First Claim
Patent Images

1. A method for forming a semiconductor device, comprising:

  • providing a substrate having a metal pattern;

    forming an etch stop layer over the substrate, wherein the etch stop layer includes a first material;

    forming a diffused area in the etch stop layer by diffusing a second material from the metal pattern to the etch stop layer; and

    forming an insulative layer over the etch stop layer, wherein the diffused area includes a lower etch rate to a first etchant than the insulative layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×