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SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

  • US 20200135549A1
  • Filed: 02/22/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/25/2018
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, the method comprising:

  • forming a first conductive layer over a substrate;

    forming an insulating layer on the first conductive layer;

    forming a via through the insulating layer to expose the first conductive layer;

    forming a self-assembled monolayer (SAM) over the insulating layer, a sidewall of the via, and a bottom of the via in contact with the first conductive layer;

    removing a first portion of the SAM over the insulating layer, while leaving a second portion of the SAM at the sidewall of the via and the bottom of the via;

    removing the SAM from the sidewall of the via, while leaving the SAM at the bottom of the via;

    forming a barrier layer at the sidewall of the via;

    removing the SAM from the bottom of the via to expose the first conductive layer; and

    forming a second conductive layer over the barrier layer and the bottom of the via such that the first conductive layer is electrically connected to the second conductive layer without the barrier layer between the first conductive layer and the second conductive layer at the bottom of the via.

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