METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICES

• US 20200135553A1
• Filed: 10/25/2019
• Published: 04/30/2020
• Est. Priority Date: 10/30/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: CHEN, Hsiao-Min, LIN, Jyh-Nan, HSU, Kai-Shiung, LIU, Ding-I
• Granted Patent: US 11,322,397 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53295 Stacked insulating layers

Abstract

In a method of manufacturing a semiconductor device, a first dielectric layer is formed over a substrate, an adhesion enhancement layer is formed on a surface of the first dielectric layer, and a second dielectric layer is formed on the adhesion enhancement layer.

Claims

1. A method of manufacturing a semiconductor device, comprising:

forming a first dielectric layer over a substrate;

forming an adhesion enhancement layer on a surface of the first dielectric layer; and

forming a second dielectric layer on the adhesion enhancement layer,

wherein the second dielectric layer includes an aluminum nitride based material.

2. The method of claim 1, wherein:

the first dielectric layer is made of silicon nitride, and

the second dielectric layer is made of aluminum nitride.

3. The method of claim 2, wherein the adhesion enhancement layer is made of silicon oxide or silicon oxynitride.

4. The method of claim 3, further comprising oxidizing the second dielectric layer.

5. The method of claim 3, wherein the adhesion enhancement layer is formed by treating the surface of the first dielectric layer with an oxygen containing gas.

6. The method of claim 5, wherein the oxygen containing gas includes at least one selected from the group consisting of N₂O, O₂, ozone and CO₂.

7. The method of claim 6, wherein during the treating the surface of the first dielectric layer with the oxygen containing gas, the substrate is heated at a temperature in a range from 250°

C. to 400°

C., and the oxygen containing gas is applied at a pressure in a range from 0.5 Torr to 20 Torr.

8. The method claim 3, wherein a thickness of the adhesion enhancement layer is in a range from 1 nm to 5 nm.

9. The method of claim 3, wherein the adhesion enhancement layer is formed by treating the surface of the first dielectric layer with oxygen containing plasma.

10. The method of claim 3, wherein the adhesion enhancement layer is formed by a deposition method.

11. A method of manufacturing a semiconductor device, comprising:

forming a first nitride-based dielectric layer over a semiconductor device structure on a substrate;

forming an adhesion enhancement layer over the first nitride-based dielectric layer;

forming a second nitride-based dielectric layer over the adhesion enhancement layer; and

at least partially oxidizing the second nitride-based dielectric layer,

wherein the first nitride-based dielectric layer is made of a different material than the second nitride-based dielectric layer.

12. The method of claim 11, further comprising forming a conductive pattern in the first nitride-based dielectric layer,

wherein an upper surface of the conductive pattern is exposed from the first nitride-based dielectric layer.

13. The method of claim 12, wherein the conductive pattern includes tungsten.

14. The method of claim 13, wherein the adhesion enhancement layer is formed on the upper surface of the conductive pattern.

15. The method of claim 13, wherein the adhesion enhancement layer is formed on the first nitride-based dielectric layer and not on the upper surface of the conductive pattern.

16. The method of claim 12, wherein:

the first nitride-based dielectric layer is made of silicon nitride, and

the second nitride-based dielectric layer is made of aluminum nitride.

17. A semiconductor device, comprising:

a first dielectric layer disposed over a semiconductor device structure;

an adhesion enhancement layer disposed over the first dielectric layer; and

a second dielectric layer disposed over the adhesion enhancement layer,

wherein the first dielectric layer includes first metal nitride and the second dielectric layer includes second metal nitride different from the first metal nitride, and

a nitrogen concentration of the second dielectric layer along a vertical direction is not uniform.

18. The semiconductor device of claim 17, wherein the first dielectric layer is made of silicon nitride.

19. The semiconductor device of claim 17, wherein:

the second dielectric layer includes aluminum oxynitride, and

the nitrogen concentration of the second dielectric layer along the vertical direction increases toward the first dielectric layer, and an oxygen concentration of the second dielectric layer along the vertical direction decreases toward the first dielectric layer

20. The semiconductor device of claim 17, wherein the second dielectric layer includes an aluminum oxynitride layer on an aluminum nitride layer.