Water Vapor Based Fluorine Containing Plasma For Removal Of Hardmask
First Claim
1. A method for processing a workpiece, the method comprising:
- supporting a workpiece on a workpiece support in a processing chamber, the workpiece comprising a hardmask layer;
generating a plasma from a process gas in a plasma chamber using a plasma source, the process gas comprising a fluorine containing gas;
exposing the workpiece to one or more radicals generated in the plasma to perform a plasma strip process on the workpiece to at least partially remove the hardmask layer from the workpiece; and
exposing the workpiece to water vapor as a passivation agent during the plasma strip process.
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Accused Products
Abstract
Apparatus, systems, and methods for conducting a hardmask (e.g., boron doped amorphous carbon hardmask) removal process on a workpiece are provided. In one example implementation, a method includes supporting a workpiece on a workpiece support in a processing chamber. The method can include generating a plasma from a process gas in a plasma chamber using a plasma source. The plasma chamber can be separated from the processing chamber by a separation grid. The method can include exposing the workpiece to one or more radicals generated in the plasma to perform a plasma strip process on the workpiece to at least partially remove the hardmask layer from the workpiece. The method can include exposing the workpiece to water vapor as a passivation agent during the plasma strip process.
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Citations
24 Claims
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1. A method for processing a workpiece, the method comprising:
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supporting a workpiece on a workpiece support in a processing chamber, the workpiece comprising a hardmask layer; generating a plasma from a process gas in a plasma chamber using a plasma source, the process gas comprising a fluorine containing gas; exposing the workpiece to one or more radicals generated in the plasma to perform a plasma strip process on the workpiece to at least partially remove the hardmask layer from the workpiece; and exposing the workpiece to water vapor as a passivation agent during the plasma strip process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A plasma processing apparatus, comprising:
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a processing chamber having a workpiece support, the workpiece support configured to support a workpiece during plasma processing; a plasma chamber separated from the processing chamber by a separation grid; an inductively coupled plasma source configured to induce a plasma in a process gas in the plasma chamber;
wherein radicals generated in the plasma pass through the separation grid for exposure to the workpiece during plasma processing;a water vapor feed line operable to deliver water vapor to one or more of the plasma chamber, the separation grid, and the processing chamber; wherein the water vapor feed line comprises a temperature regulation system configured to reduce condensation along a delivery path of water vapor from the water vapor feed line. - View Dependent Claims (24)
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Specification