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GATE CUT CRITICAL DIMENSION SHRINK AND ACTIVE GATE DEFECT HEALING USING SELECTIVE DEPOSITION

  • US 20200135575A1
  • Filed: 10/26/2018
  • Published: 04/30/2020
  • Est. Priority Date: 10/26/2018
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device, the method comprising:

  • forming a sacrificial gate over a shallow trench isolation region;

    removing a portion of the sacrificial gate to expose a surface of the shallow trench isolation region;

    depositing a semiconductor material on exposed sidewalls of the sacrificial gate; and

    forming a gate cut dielectric on a portion of the shallow trench isolation between sidewalls of the semiconductor material.

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