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Dielectric Fins With Different Dielectric Constants and Sizes in Different Regions of a Semiconductor Device

  • US 20200135580A1
  • Filed: 09/20/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/26/2018
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first epi-layer and a second epi-layer each located in a first region of the semiconductor device;

    a first dielectric fin located between the first epi-layer and the second epi-layer, wherein the first dielectric fin has a first dielectric constant;

    a third epi-layer and a fourth epi-layer each located in a second region of the semiconductor device; and

    a second dielectric fin located between the third epi-layer and the fourth epi-layer, wherein the second dielectric fin has a second dielectric constant that is less than the first dielectric constant.

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