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METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE

  • US 20200135586A1
  • Filed: 05/06/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/26/2018
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor structure, comprising:

  • receiving a substrate including a first transistor with a first conductive region and a second transistor with a second conductive region, wherein the first transistor and the second transistor have different conductive types;

    performing a first laser anneal on the first conductive region;

    performing a first amorphization on the first conductive region and the second conductive region;

    forming a pre-silicide layer on the substrate;

    performing a thermal anneal to the substrate to form a silicide layer; and

    performing a second laser anneal on the first conductive region and the second conductive region after the formation of the pre-silicide layer.

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