SEMICONDUCTOR STRUCTURE

• US 20200135610A1
• Filed: 12/23/2019
• Published: 04/30/2020
• Est. Priority Date: 11/14/2017
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: WU, CHI-HSI, HUNG, WENSEN, LIN, TSUNG-SHU, KU, SHIH-CHANG, CHEN, TSUNG-YU, LI, HUNG-CHI
• Granted Patent: US 11,088,048 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/08 of an individual bonding area
• CPC Class Codes: H01L 2224/08145 the bodies being stacked
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32 of an individual layer connector
• CPC Class Codes: H01L 2224/321 Disposition
• CPC Class Codes: H01L 2224/32175 the item being metallic
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73251 : on different surfaces
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06568 : the devices decreasing in size, e.g. pyramidical stack
• CPC Class Codes: H01L 2225/06589 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/3675 : characterised by the shape of the housing
• CPC Class Codes: H01L 23/3733 : having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures H01L23/3732, H01L23/3737 take precedence
• CPC Class Codes: H01L 23/3736 : Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 24/08 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/18161 : of a flip chip
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate

Abstract

The present disclosure provides a semiconductor structure. The semiconductor includes a substrate, a block bonded on the substrate, a first die bonded on the block, a second die disposed over the first die, and a heat spreader covering the block and having a surface facing toward and proximal to the block. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the block.

Claims

1. A semiconductor structure, comprising:

a substrate;

a block bonded on the substrate;

a first die bonded on the block;

a second die disposed over the first die; and

a heat spreader covering the block and having a surface facing toward and proximal to the block;

wherein a thermal conductivity of the heat spreader is higher than a thermal conductivity of the block.

2. The semiconductor structure of claim 1, further comprising:

a thermal interface material (TIM) disposed between the block and the heat spreader, wherein a thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.

3. The semiconductor structure of claim 2, wherein the TIM is in contact with the surface of the heat spreader and the block.

4. The semiconductor structure of claim 2, wherein TIM is disposed over the second die and separated from the block.

5. The semiconductor structure of claim 1, wherein the first die is bonded on a surface of the block, and a portion of the surface of the block exposed from the first die faces toward the surface of the heat spreader.

6. The semiconductor structure of claim 1, wherein the surface of the heat spreader faces towards and separated from the substrate.

7. The semiconductor structure of claim 1, further comprising:

a cavity disposed between the heat spreader and the substrate and surrounding the block.

8. The semiconductor structure of claim 7, wherein the cavity further surrounds the first die and the second die.

9. The semiconductor structure of claim 7, wherein a portion of a top surface of the block is exposed in the cavity.

10. A semiconductor structure, comprising:

a substrate;

a block bonded on the substrate;

a die stack, disposed over the block; and

a heat spreader having a surface facing toward and proximal to the die stack,

wherein the surface of the heat spreader is conformal to a topography of the die stack, and

wherein a thermal conductivity of the heat spreader is higher than a thermal conductivity of the block.

11. The semiconductor structure of claim 10, wherein a top surface of the die stack is exposed from the heat spreader.

12. The semiconductor structure of claim 10, wherein a top surface of the die stack is covered by the heat spreader.

13. The semiconductor structure of claim 10, further comprising:

a thermal interface material (TIM) disposed between the heat spreader and the die stack, wherein the TIM is conformal to the topography of the die stack.

14. The semiconductor structure of claim 13, wherein the TIM is further disposed between the block and the heat spreader.

15. The semiconductor structure of claim 10, wherein the die stack includes a first die bonded on the block and a second die disposed on the first die, the heat spreader includes an inner surface facing a top surface of the first die and a sidewall of the second die.

16. The semiconductor structure of claim 10, further comprising:

a plurality of conductors, disposed between and electrically connecting the block and the substrate.

17. The semiconductor structure of claim 10, further comprising:

a bonding material, bonding the heat spreader on the substrate, wherein the bonding material surrounds the block.

18. A semiconductor structure, comprising:

a substrate;

a block bonded on the substrate;

a plurality of dies, disposed over the block;

a heat spreader having a surface facing toward and proximal to the plurality of dies; and

a thermal interface material (TIM) disposed between the plurality of dies and the heat spreader,

wherein the TIM is in contact with a sidewall of a topmost die of the plurality of dies and the heat spreader, and

wherein a thermal conductivity of the heat spreader is higher than a thermal conductivity of the block.

19. The semiconductor structure of claim 18, wherein a thermal conductivity of the heat spreader is between about 370 W/mK and about 420 W/mK.

20. The semiconductor structure of claim 18, wherein the heat spreader comprises a material selected from a group consisting of aluminum, copper, copper alloy, copper tungsten, aluminum-silicon-carbide, graphite, and aluminum silicon carbide composite.