SEMICONDUCTOR DEVICE WITH ENHANCED THERMAL DISSIPATION AND METHOD FOR MAKING THE SAME

• US 20200135613A1
• Filed: 10/28/2019
• Published: 04/30/2020
• Est. Priority Date: 10/30/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: CHEN, Yang-Che, LIN, Chen-Hua, TSENG, Huang-Wen, LIANG, Victor Chiang, LIU, Chwen-Ming
• Granted Patent: US 11,626,343 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/03002 for supporting the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/03616 Chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/06131 : being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/11 : Manufacturing methods
• CPC Class Codes: H01L 2224/11002 : for supporting the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/11424 : Immersion coating, e.g. in a solder bath
• CPC Class Codes: H01L 2224/11464 : Electroless plating
• CPC Class Codes: H01L 2224/12105 : Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/13014 : being circular or elliptic
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13118 : Zinc [Zn] as principal constituent
• CPC Class Codes: H01L 2224/1312 : Antimony [Sb] as principal constituent
• CPC Class Codes: H01L 2224/13123 : Magnesium [Mg] as principal constituent
• CPC Class Codes: H01L 2224/13124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13149 : Manganese [Mn] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/1316 : Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/13166 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/13171 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/13179 : Niobium [Nb] as principal constituent
• CPC Class Codes: H01L 2224/1318 : Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/13181 : Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/13184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/14131 : being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/14181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/14519 : including bump connectors providing primarily thermal dissipation
• CPC Class Codes: H01L 2224/16106 : the bump connector connecting one bonding area to at least two respective bonding areas
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16245 : the item being metallic
• CPC Class Codes: H01L 2224/16501 : at the bonding interface
• CPC Class Codes: H01L 2224/27 : Manufacturing methods
• CPC Class Codes: H01L 2224/28105 : Layer connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. layer connectors on chip-scale packages
• CPC Class Codes: H01L 2224/291 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29305 : Gallium [Ga] as principal constituent
• CPC Class Codes: H01L 2224/29324 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29339 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29386 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/32106 : the layer connector connecting one bonding area to at least two respective bonding areas
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/32505 : outside the bonding interface, e.g. in the bulk of the layer connector
• CPC Class Codes: H01L 2224/33181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/33519 : including layer connectors providing primarily thermal dissipation
• CPC Class Codes: H01L 2224/73104 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73153 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81424 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/81447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/81455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/81457 : Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/81486 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/81493 : with a principal constituent of the material being a solid not provided for in groups H01L2224/814 - H01L2224/81491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/83104 : by applying pressure, e.g. by injection
• CPC Class Codes: H01L 2224/83203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/83815 : Reflow soldering
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/9212 : Sequential connecting processes
• CPC Class Codes: H01L 2224/92225 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3675 : characterised by the shape of the housing
• CPC Class Codes: H01L 23/3736 : Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 23/3737 : Organic materials with or without a thermoconductive filler
• CPC Class Codes: H01L 23/42 : Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
• CPC Class Codes: H01L 23/4275 : by melting or evaporation of solids
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04642 : SiC
• CPC Class Codes: H01L 2924/05032 : AlN
• CPC Class Codes: H01L 2924/0532 : 2nd Group
• CPC Class Codes: H01L 2924/0542 : 12th Group
• CPC Class Codes: H01L 2924/05432 : Al2O3
• CPC Class Codes: H01L 2924/05442 : SiO2
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07025 : Polyimide
• CPC Class Codes: H01L 2924/0715 : Polysiloxane
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/381 : Pitch distance

Abstract

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.

Claims

1. A method, comprising:

forming a solder layer on a surface of one or more chips;

positioning a lid over the solder layer on each of the one or more chips; and

applying heat and pressure to melt the solder layer and attach each lid to a corresponding chip via the solder layer,

wherein the solder layer has a thermal conductivity of ≥

50 W/mK.

2. The method according to claim 1, further comprising forming an integrated fan-out wafer on a frame, wherein the integrated fan-out wafer includes the one or more chips, before forming the solder layer on the surface of the one or more chips.

3. The method according to claim 1, wherein the solder layer is a patterned solder layer.

4. The method according to claim 3, wherein the patterned solder layer includes a plurality of spaced-apart solder regions.

5. The method according to claim 1, further comprising forming a plurality of bonding pads on the surface of the one or more chips before forming the solder layer.

6. The method according to claim 5, further comprising:

forming a metal pillar on each of the plurality of bonding pads before forming the solder layer,

wherein the solder layer comprises solder balls formed on each of the metal pillars.

7. The method according to claim 6, wherein the metal pillars are formed of copper.

8. The method according to claim 1, further comprising forming a thermal interface material between the lid and the surface of the chip.

9. The method according to claim 2, further comprising separating the one or more chips before positioning the lids.

10. The method according to claim 2, further comprising:

removing the one or more chips from the frame; and

attaching the one or more chips to a substrate,

wherein the removing and attaching the one or more chips is performed before positioning the lids.

11. The method according to claim 10, further comprising forming an underfill layer between the one or more chips and the substrate.

12. The method according to claim 1, wherein the heat and pressure are applied to each lid.

13. The method according to claim 12, wherein a thermal compressive bond head is used to apply the heat and pressure to each lid.

14. A method, comprising:

forming a metal pillar on each of a plurality of bonding pads disposed on a main surface of a chip;

forming a solder layer on each of the metal pillars;

positioning a lid over the solder layer on each of the metal pillars; and

applying heat and pressure to melt the solder layer and attach the lid to the chip via the solder layer.

15. The method according to claim 14, wherein the solder layer comprises solder balls formed on each of the metal pillars.

16. The method according to claim 14, wherein the metal pillars are formed of copper or nickel.

17. The method according to claim 14, further comprising forming an integrated fan-out wafer on a frame, wherein the integrated fan-out wafer includes the chip, before forming the metal pillars.

18. A semiconductor device, comprising:

a chip disposed over a substrate;

a solder layer disposed over a surface of the chip; and

a lid attached to the chip via the solder layer.

19. The semiconductor device of claim 18, wherein the chip is an integrated fan-out chip, system on a chip, wafer-level chip scale package, or chip on wafer on substrate.

20. The semiconductor device of claim 18, further comprising an underfill layer between the chip and the substrate.