ION THROUGH-SUBSTRATE VIA
First Claim
1. An integrated circuit (IC) comprising:
- a first semiconductor substrate having a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate, wherein the first semiconductor substrate comprises a first doped channel region extending from the front-side surface to the back-side surface;
a first through substrate via (TSV) defined at least by the first doped channel region; and
a first interconnect structure on the front-side surface of the first semiconductor substrate, wherein the first interconnect structure comprises a plurality of first conductive wires and a plurality of first conductive vias, and wherein the first conductive wires and the first conductive vias define a conductive path to the first TSV.
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Accused Products
Abstract
Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a plurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.
22 Citations
20 Claims
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1. An integrated circuit (IC) comprising:
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a first semiconductor substrate having a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate, wherein the first semiconductor substrate comprises a first doped channel region extending from the front-side surface to the back-side surface; a first through substrate via (TSV) defined at least by the first doped channel region; and a first interconnect structure on the front-side surface of the first semiconductor substrate, wherein the first interconnect structure comprises a plurality of first conductive wires and a plurality of first conductive vias, and wherein the first conductive wires and the first conductive vias define a conductive path to the first TSV. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An integrated circuit (IC) comprising:
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a first IC die comprising a first semiconductor substrate and a first interconnect structure overlying the first semiconductor substrate; a second IC die over the first IC die, wherein the second IC die comprises a second semiconductor substrate and a second interconnect structure underlying the second semiconductor substrate, and wherein the first and second IC dies contact at a bond interface between the first and second interconnect structures; a plurality of semiconductor devices on the first semiconductor substrate and/or the second semiconductor substrate; and a first through-substrate via (TSV) and a second TSV within the second semiconductor substrate and electrically coupled to the first interconnect structure through the second interconnect structure, and wherein the first and second TSVs and the second semiconductor substrate are comprised of a semiconductor material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for forming an integrated circuit (IC), the method comprising:
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performing an ion implant process into a front-side surface of a first semiconductor substrate to form a first doped channel region extending into the first semiconductor substrate from the front-side surface; forming a first interconnect structure on the front-side surface of the first semiconductor substrate; thinning the first semiconductor substrate from a back-side surface of the first semiconductor substrate until the first doped channel region is exposed, wherein the back-side surface is opposite the front-side surface of the first semiconductor substrate; and forming a conductive pad overlying and electrically coupled to the first doped channel region on the back-side surface of the first semiconductor substrate. - View Dependent Claims (17, 18, 19, 20)
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Specification