INTEGRATED CIRCUIT STRUCTURE

• US 20200135644A1
• Filed: 01/18/2019
• Published: 04/30/2020
• Est. Priority Date: 10/26/2018
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: LIN, Yi-Hsiung, CHANG, Shang-Wen, CHIU, Yi-Hsun
• Granted Patent: US 10,879,176 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/76895 Local interconnects; Local pads, as exemplified by patent document EP0896365
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/5286 Arrangements of power or ground buses
• CPC Class Codes: H01L 23/535 including internal interconnections, e.g. cross-under constructions internal lead connections H01L23/481

Abstract

An integrated circuit structure is provided including a first transistor, a second transistor, a power rail, a first metal via and a plurality of metal tracks. The first transistor includes a first fin above a substrate and a source feature. The second transistor includes a second fin and a drain feature. The power rail is formed between the first fin and the second fin and below the source feature and the drain feature. The first metal via is formed over the power rail and electrically connected to source or drain feature. The metal tracks are separated from each other. Gaps between any two adjacent metal tracks are identical to each other, each of the metal tracks overlapping the power rail has a first width, each of the metal tracks not overlapping the power rail has a second width, and the first width is greater than the second width.

Claims

1. An integrated circuit structure, comprising:

a first transistor comprising a first fin above a substrate, and a source feature on the first fin;

a second transistor comprising a second fin above the substrate, and a drain feature on the second fin;

a power rail, formed between the first fin and the second fin and below the source feature and the drain feature, wherein the power rail, the first fin structure and the second fin structure extend in a first direction;

a first metal via, formed over the power rail and electrically connected to the source feature or the drain feature; and

a plurality of metal tracks extending in the first direction and separated from each other above the first metal via,

wherein gaps between any two adjacent metal tracks are identical to each other, each of the metal tracks overlapping the power rail has a first width, each of the metal tracks not overlapping the power rail has a second width, and the first width is greater than the second width.

2. The integrated circuit structure as claimed in claim 1, further comprising:

a first metal contact, formed extending in a second direction and partially overlapping the power rail and below the metal tracks, wherein the second direction is perpendicular to the first direction.

3. The integrated circuit structure as claimed in claim 2, wherein a layout of the first metal via is arranged within a layout of the first metal contact, and the first metal contact connects the first metal via to electrically connect the power rail or one of the metal tracks.

4. The integrated circuit structure as claimed in claim 3, further comprising:

a second metal via, formed over the power rail; and

a second metal contact, formed extending in the second direction and partially overlapping the power rail and below the metal tracks;

wherein the power rail is electrically connected to the source feature of the first transistor through the first metal via and the first metal contact, the one of metal tracks with the first width is electrically connected to the drain feature of the second transistor through the second metal via and the second metal contact.

5. The integrated circuit structure as claimed in claim 1, wherein amount of the metal tracks with the first width is equal to or smaller than amount of the metal tracks with the second width.

6. The integrated circuit structure as claimed in claim 1, wherein sum of the first width and the gap is larger than the sum of the second width and the gap, and the sum of the first width and the gap is smaller than three times the sum of the second width and the gap.

7. The integrated circuit structure as claimed in claim 6, wherein the second width is equal to or larger than the gap, and the first width is greater than 1.5 times the gap and smaller than 3 times the gap.

8. An integrated circuit structure, comprising:

a first transistor comprising a first fin above a substrate, and a source feature on the first fin;

a second transistor comprising a second fin above the substrate, and a drain feature on the second fin;

a power rail, formed between the first fin and the second fin and below the source feature and the drain feature, wherein the power rail, the first fin structure and the second fin structure extend in a first direction;

a first metal via formed over the power rail and electrically connected to the source feature or the drain feature; and

a plurality of metal tracks, extending in the first direction and separated from each other over the first metal via and the power rail of the integrated circuit structure,

wherein the widths of the metal tracks are identical to each other, a first gap is arranged between any two of the adjacent metal tracks which are both overlapping the power rail, a second gap is arranged between any two of the adjacent metal tracks which are not both overlapping the power rail, and the first gap is larger than the second gap.

9. The integrated circuit structure as claimed in claim 8, further comprising:

a first metal contact extending in a second direction and partially overlapping the power rail and below the metal tracks, wherein the second direction is perpendicular to the first direction.

10. The integrated circuit structure as claimed in claim 9, wherein layout of the first metal via is arranged within a layout of the first metal contact, and the first metal contact connects the first metal via to electrically connect the power rail or one of the metal tracks.

11. The integrated circuit structure as claimed in claim 10, further comprising:

a second metal via, formed over the power rail; and

a second metal contact, formed extending in the second direction and partially overlapping the power rail and below the metal tracks;

wherein the power rail is electrically connected to the source feature of the first transistor through the first metal via and the first metal contact, the one of the metal tracks which is overlapping the power rail is electrically connected to the drain feature of the second transistor through the second metal via and the second metal contact.

12. The integrated circuit structure as claimed in claim 8, wherein amount of the metal tracks which are overlapping the power rail is equal to or smaller than amount of the metal tracks which are not overlapping the power rail.

13. The integrated circuit structure as claimed in claim 8, wherein sum of the width and the first gap is larger than the sum of the width and the second gap, and the sum of the width and the first gap is smaller than three times the sum of the width and the second gap.

14. The integrated circuit structure as claimed in claim 13, wherein the width is equal to or larger than the second gap, and the first gap is larger than the width and smaller than three times the width.

15. An integrated circuit structure, comprising:

a first transistor comprising a first fin above a substrate, and a source feature on the first fin;

a second transistor comprising a second fin above the substrate, and a drain feature on the second fin;

a power rail, formed between the first fin and the second fin and below the source feature and the drain feature, wherein the power rail, the first fin structure and the second fin structure extend in a first direction;

a plurality of metal contacts, extending in a second direction and arranged above the power rail, wherein the second direction is perpendicular to the first direction;

a plurality of metal vias, arranged above the power rail; and

a plurality of metal tracks, extending in the first direction and partially overlapping the power rail and arranged over the metal vias and the metal contacts, wherein a portion of the metal tracks are configured to have a first pitch, another portion of the metal tracks are configured to have a second pitch, and the first pitch is larger than the second pitch.

16. The integrated circuit structure as claimed in claim 15, wherein the source feature connects one of the metal contacts and electrically connects the power rail through the connected metal via, and the drain feature connects another one of the metal contacts and electrically connects one of the metal tracks which is overlapping the power rail through the connected metal via.

17. The integrated circuit structure as claimed in claim 16, further comprising:

a first insulating portion, arranged above the substrate, wherein the power rail is arranged within the first insulating portion; and

a second insulating portion, arranged above the first insulating portion, wherein the metal contacts, the metal vias, the source feature and the drain feature are arranged within the second insulating portion, and the metal tracks are arranged above the second insulating portion.

18. The integrated circuit structure as claimed in claim 15, wherein the amount of the metal tracks which are overlapping the power rail is equal to or smaller than the amount of the metal tracks which are not overlapping the power rail.

19. The integrated circuit structure as claimed in claim 15, wherein the first pitch comprises a first width and a gap, the second pitch comprises a second width and a gap, the gaps between adjacent metal tracks are identical to each other, the first width is greater than the second width, each of the metal tracks overlapping the power rail has the first width, each of the metal tracks not overlapping the power rail has the second width.

20. The integrated circuit structure as claimed in claim 15, wherein the first pitch comprises a first gap and a width, the second pitch comprises a second gap and a width, the widths of the metal tracks are identical to each other, the first gap is larger than the second gap, the first gap is arranged between any two of the adjacent metal tracks which are both overlapping the power rail, and the second gap is arranged between any two of the adjacent metal tracks which are not both overlapping the power rail.