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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

  • US 20200135647A1
  • Filed: 01/01/2020
  • Published: 04/30/2020
  • Est. Priority Date: 05/05/2016
  • Status: Active Grant
First Claim
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1. A method for fabricating semiconductor device, comprising:

  • providing a substrate;

    forming a gate structure on the substrate;

    forming an epitaxial layer adjacent to the gate structure;

    forming an interlayer dielectric (ILD) layer on the gate structure;

    forming a first contact hole in the ILD layer adjacent to the gate structure; and

    forming a cap layer in the recess, wherein a top surface of the cap layer is even with or lower than a top surface of the substrate.

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