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Graphene Layer for Reduced Contact Resistance

  • US 20200135655A1
  • Filed: 09/04/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/25/2018
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a trench within a dielectric layer, the trench comprising an interconnect portion and a via portion, the via portion exposing an underlying conductive feature;

    depositing a seed layer within the trench;

    depositing a carbon layer on the seed layer;

    performing a carbon dissolution process to cause a graphene layer to form between the seed layer and the underlying conductive feature; and

    filling a remainder of the trench with a conductive material.

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