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SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

  • US 20200135664A1
  • Filed: 10/10/2019
  • Published: 04/30/2020
  • Est. Priority Date: 10/31/2018
  • Status: Active Grant
First Claim
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1. A semiconductor package comprising:

  • a first integrated circuit die, the first integrated circuit die comprising;

    a first substrate comprising an active device;

    an interconnect structure overlying the first substrate and comprising multiple metal layers with vias connecting the multiple metal layers, the interconnect structure being electrically coupled to the active device;

    a seal ring structure overlying the first substrate and along a periphery of the first substrate, the seal ring structure comprising multiple metal layers with vias connecting the multiple metal layers, the seal ring structure having a topmost metal layer, the topmost metal layer being the metal layer of the seal ring structure that is furthest from the first substrate, the topmost metal layer of the seal ring structure having an inner metal structure and an outer metal structure, the inner metal structure being spaced apart from the outer metal structure; and

    a polymer layer over the seal ring structure, the polymer layer having an outermost edge that is over a top surface of the outer metal structure of the seal ring structure, the outermost edge of the polymer layer being laterally between sidewalls of the outer metal structure of the seal ring structure.

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